GaN on GaN
GaN (Gallium Nitride) on GaN wafer is the best solution because of zero lattice mismatch between substrate and epi layers. The lower defect in GaN / GaN film provides extended device durability. The lattice and thermal expansion coefficient of GaN-on-GaN wafer are perfectly matched. Therefore, a very thick GaN layer can be epitaxially grown on a bulk GaN substrate, enabling the fabrication of high breakdown voltage devices. PAM-XIAMEN, a GaN on GaN wafer manufacturer, offers 2” and 4” GaN on GaN epi wafer in wide bandgap (WBG) semiconductors:
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Description
1. N+ GaN Layers on N+ GaN Substrate
| Item 1 | Specifications |
| GaN wafer | 100 mm or 50.8mm,N+ GaN Wafer |
| 1Epi growth | N+,10-15um, Nd: 1E15-1E16 |
2. N+/P+ GaN Layers on N+ GaN Substrate
| Item 2 | Specifications |
| GaN wafer | 100 mm or 50.8mm,N+ GaN Wafer |
| 1Epi growth | N+, 10-15um,Nd:1E15-1E16 |
| 2Epi growth | 0.5-2um, P type, Na:1E17-1E19 |
| 3Epi growth | 0.1um, P type,GaN, Na:-8E19 |
3. N+GaN Layers on Semi-insulating GaN Substrate
| Item 3 | Specifications |
| GaN wafer | 100 mm or 50.8mm, Semi-insulating GaN Wafer |
| 1Epi growth | N+,10-15um,Nd:1E15-1E16 |
4. Vertical Technology of GaN/GaN Wafer
Vertical GaN technology takes the full use of GaN properties because it is based on homoepitaxial growth of GaN on a GaN substrate. The obvious features of vertical GaN technology:
Homoepitaxial growth on GaN substrate obtains the best spectra of these cut-in angles, resulting in the best morphology and the best device performance. Flexible use of bulk GaN substrate from can produce ultra-low-doped n-GaN. Controlling Mg doping is to grade p-n junctions during the growth process. Generating sharp pn junction as needed is a planarized regrowth process for surface roughness with extremely low surface roughness. In the case of vertical p GaN/n GaN, both the substrate and the epitaxial layer are GaN with extremely low defect density.
