A Face Freestanding GaN Substrate
We offer a-plane Freestanding GaN Substrate including Si-doped, undoped and semi-insulating one. For Freestanding GaN, we have a history to control macro defects. Before 2000, we have dedicated research of GaN material. In 2007, we offer FS GaN on small quantity. In 2009, we offer FS GaN substrate on mass production, and we grade macro defects density: B grade: (5-10) cm-2 or A grade <5 cm-2. In 2011, we have a big improvement: for large size (2”), we can control them with macro defects (0-2) cm-2. The specification of a-plane (11-20) GaN substrate is as follows:
- Description
- Inquiry
Description
1. Si-doped A Face GaN Crystal Substrate
| Item | GANW-FS-GAN A-N |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| Orientation | A plane (11-20) off angle toward M-axis 0 ±0.5° |
| A plane (11-20) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.05 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 105 to 5 x 106 cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
2. Undoped Freestanding A Plane GaN Substrate
| Item | GANW-FS-GAN A-U |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| Orientation | A plane (11-20) off angle toward M-axis 0 ±0.5° |
| A plane (11-20) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.1 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 105 to 5 x 106 cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
3. Free Standing Semi-insulating A-Plane GaN Substrate
| Item | GANW-FS-GAN A-SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| Orientation | A plane (11-20) off angle toward M-axis 0 ±0.5° |
| A plane (11-20) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 10 6Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 105 to 5 x 106 cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
