N Type Freestanding GaN Substrate

N Type Freestanding GaN Substrate

PAM-XIAMEN has established a series manufacturing technology for GaN substrates of various orientations, crystalline GaN Wafer and electrical conductivity and related III-N materials. More specifications of N-type GaN substrate please see below:

Description

1. Specification of N Type GaN Freestanding Substrate

1.1 4″ N-Type -Doped GaN Free-standing Substrate

Item PAM-FS-GaN100-N+
Conduction Type N type/Si doped
Size 4″(100)+/-1mm
Thickness 480+/-50
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (10-10)+/-0.5°
Primary Flat Length 32+/-1mm
Secondary Flat Location (1-210)+/-3°
Secondary Flat Length 16+/-1mm
Resistivity(300K) <0.05Ω·cm
Dislocation Density <5×10^6cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
Back Surface: 1. Fine ground
                          2. Polished
Usable Area ≥ 90 %

 

1.2 4″ Undoped GaN, N Type

Item PAM-FS-GaN100-N-
Conduction Type N type/undoped
Size 4″(100)+/-1mm
Thickness 480+/-50
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (10-10)+/-0.5°
Primary Flat Length 32+/-1mm
Secondary Flat Location (1-210)+/-3°
Secondary Flat Length 16+/-1mm
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×10^6cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
Back Surface: 1. Fine ground
                         2. Polished
Usable Area ≥ 90 %

 

1.3 2″ Si-Doped GaN Film

Item PAM-FS-GaN50-N+
Conduction Type N type/Si doped
Size 2″(50.8)+/-1mm
Thickness 400+/-50
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (10-10)+/-0.5°
Primary Flat Length 16+/-1mm
Secondary Flat Location (1-210)+/-3°
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.05Ω·cm
Dislocation Density <5×10^6cm-2
FWHM <=100arc.sec
TTV <=15um
BOW <=+/-20um
Surface Finish Front Surface: Ra<=0.3nm. Epi-ready polished
 Back Surface: 1. Fine ground
                         2. Polished
Usable Area ≥ 90 %

 

1.4 2″ Undoped N Type GaN Thin Film

Item PAM-FS-GaN50-N-
Conduction Type N type/undoped
Size 2″(50.8)+/-1mm
Thickness 400+/-50
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (10-10)+/-0.5°
Primary Flat Length 16+/-1mm
Secondary Flat Location (1-210)+/-3°
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×10^6cm-2
FWHM <=100arc.sec
TTV <=15um
BOW <=+/-20um
Surface Finish Front Surface: Ra<=0.3nm. Epi-ready polished
 Back Surface: 1. Fine ground
                         2. Polished
Usable Area ≥ 90 %

 

2. Application of GaN Substrate

At present, the application of GaN is still dominated by the military, and it has gradually begun to move towards commercial fields, such as unmanned vehicles, wireless communication base stations, etc. And there are broad application prospects in white light LEDs, short-wavelength lasers, ultraviolet detectors, and high-temperature high-power devices. The largest application of GaN substrates (like semi-insulating / P type / N type GaN thin film) currently belongs to lasers, which are mainly used in the production of blue laser diodes. These products have been used as key components in Blu-ray Discs and HD-DVDs. In addition, these lasers fabricated on GaN substrate with ohmic contact are also very suitable for projection display, high-precision printing and optical sensing fields.

Moreover, there are potential GaN wafer market in optical detectors, which mainly include flame sensing, ozone monitoring, pollution monitoring, blood analysis, mercury lamp disinfection monitoring, laser detectors and other applications that require solar blind zone characteristics.

It is foreseeable that with the gradual maturity of GaN substrate technology, low-cost, high-quality GaN substrates are expected to be widely used in the fields of semiconductor microelectronic devices and optoelectronic devices.

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