N Type GaN on Sapphire, Silicon or SiC Template

Description

1. Specification of N Type GaN/Sapphire Template

1.1  4 inch SI-Doped GaN/Sapphire Substrates

Item	GANW-T-GaN-100-N
Dimension	100 ±0.1 mm
Thickness	4.5 ±0.5 μm
Orientation of GaN	C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN	(1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type	N-type
Resistivity (300K)	< 0.05Ω·cm
Carrier Concentration	>1x1018cm-3(≈doping concentration)
Mobility	~ 200cm2 / V·s
Dislocation Density	> 5x108cm-2(estimated by FWHMs of XRD)
Structure	4.5 ±0.5μm GaN/~ 50 nm uGaN buffer layer/650 ±25 μm sapphire
Orientation of Sapphire	C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire	(11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness:	Front side: Ra<0.5nm, epi-ready;
	Back side: etched or polished.
Useable Area	> 90% (edge and macro defects exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

1.2  4 inch Undoped GaN/Sapphire Substrates

Item	GANW-T-GaN-100-U
Dimension	100 ±0.1 mm
Thickness	4.5 ±0.5 μm
Orientation of GaN	C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN	(1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type	N-type
Resistivity (300K)	< 0.5 Ω·cm
Carrier Concentration	<5x1017cm-3
Mobility	~ 300cm2 / V·s
Dislocation Density	< 5x108cm-2(estimated by FWHMs of XRD)
Structure	4.5 ±0.5μm GaN/~ 50 nm uGaN buffer layer/650 ±25 μm sapphire
Orientation of Sapphire	C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire	(11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness:	Front side: Ra<0.5nm, epi-ready;
	Back side: etched or polished.
Useable Area	> 90% (edge and macro defects exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

1.3  2 inch SI-Doped GaN/Sapphire Substrates

Item	GANW-T-GaN-50-N
Dimension	50.8 ±0.1 mm
Thickness	5 ±1 μm
Orientation of GaN	C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN	(1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type	N-type
Resistivity (300K)	< 0.05 Ω·cm
Carrier Concentration	>1x1018cm-3(≈doping concentration)
Mobility	~ 200cm2 / V·s
Dislocation Density	> 5x108cm-2(estimated by FWHMs of XRD)
Structure	5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire
Orientation of Sapphire	C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire	(11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness:	Front side: Ra<0.5nm, epi-ready;
	Back side: etched or polished.
Useable Area	> 90% (edge and macro defects exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

1.4  2 inch Undoped GaN/Sapphire Substrates

Item	GANW-T-GaN-50-U
Dimension	50.8 ±0.1 mm
Thickness	5 ±1 μm
Orientation of GaN	C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN	(1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type	N-type
Resistivity (300K)	< 0.5 Ω·cm
Carrier Concentration	<5X1017CM-3
Mobility	~ 300cm2 / V·s
Dislocation Density	< 5x108cm-2(estimated by FWHMs of XRD)
Structure	5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire
Orientation of Sapphire	C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire	(11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness:	Front side: Ra<0.5nm, epi-ready;
	Back side: etched or polished.
Useable Area	> 90% (edge and macro defects exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

1.5  List of N-type GaN on Silicon Template

Description	Type	Dopant	Substrate	Size	GaN thickness	Surface
GaN Template on 4″ Silicon Wafer, GaN film	N type	undoped	Si (111) substrates	4″	2um	single side polished
GaN Template on 4″ Silicon Wafer, GaN film	N type	Si doped	Si (111) substrates	4″	2um	single side polished
GaN Template on 2″ Silicon Wafer, GaN film	N type	undoped	Si (111) substrates	2″	2um	single side polished
GaN Template on 2″ Silicon Wafer, GaN film	N type	Si doped	Si (111) substrates	2″	2um	single side polished

 

2. Detail Specification of GaN on Silicon Template

2.1  4″ Dia, N Type GaN on Silicon

4″ dia, GaN on silicon (GaN on Si)
Dimension:100+/-0.1mm
GaN layer thickness : 2um
GaN layer Conductivity: n type, Si doped.
Structure:GaN on Silicon(111).
Doping concentration: xxxcm-3
XRD(102)<xx arc.sec
XRD(002)<xx arc.sec
Single side polished, epi-ready, Ra<0.5nm
Package:Packed in a class 100 clean room environment, in single container, under a nitrogen atmosphere.

2.2  2″ Dia, Si Doped GaN on Silicon

GaN on silicon,2” dia,

GaN layer thickness : 1.8um

GaN layer: n type, Si doped.

Resistivity:<0.05ohm.cm

Structure:GaN on Silicon(111).

XRD(102)<300arc.sec

XRD(002)<400arc.sec

Single Side Polished, Epi-ready,Ra<0.5nm

Carrier concentration:5E17~5E18

2.2.1 Primary flat of GaN on Silicon

3. Specification of GaN on SiC Template

2″ or 4” GaN on 4H or 6H SiC Substrate

1)Undoped GaN buffer or AlN buffer are available;
2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available;
3)vertical conductive structures on n-type or semi-insulating SiC;
4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer;
5)GaN n-type layer on 350µm+/-25um thick 2” or 4” wafer.
6) Single or double side polished, epi-ready, Ra<0.5um
7)Typical value on XRD:
Wafer ID	Substrate ID	XRD(102)	XRD(002)	Thickness
#2153	X-70105033 (with AlN)	298	167	679um

 

4. FWHM and XRD Report of GaN on Sapphire Template

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.

Testing Project: FWHM and XRD project

The half-height full width (FWHM) is an expression of the range of functions given by the difference between two extreme values of the independent variable equal to half of its maximum. In other words, it is the width of the spectral curve measured between those points on the Y-axis, which is half the maximum amplitude.

Below is an example of FWHM and XRD of GaN on Sapphire template:

FWHM and XRD of GaN on Sapphire template

5. Low-Temperature PL Spectra (at 77 K) of GaN Films Grown on Different Substrates

Figure 1 shows a low-temperature PL spectra (at 77 K) of GaN films grown on different substrates. PL spectra of GaN grown on different substrates are dominated by the near-band-edge emission at around 360 nm. The full width at half maximum (FWHM) of the GaN films produced on samples A (4 nm) and B (8 nm) are narrower than that of the films grown on samples C (10 nm) and D (13 nm), indicating the low defect density and high crystalline quality of the GaN films due to their lower lattice mismatch, which is consistent with the XRD results. Similar trends of the yellow band-emission peak on these samples were also observed (data not shown here). The yellow luminescence is related to deep level defects in GaN.

Figure 1. Low-temperature photoluminescence (PL) spectra (at 77 K) of GaN films grown on different substrates. FWHM: full width at half maximum

 

Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. From August 1, 2023 on, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding!