Semi-insulating GaN on Sapphire or Silicon Template
PAM-XIAMEN’s Template Products includes 4” and 2” Semi-Insulating GaN on Sapphire/Silicon Substrates, which are epi-ready.
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Description
1. Specifications of Semi-Insulating GaN on Sapphire Template
1.1 4 inch Semi-Insulating GaN/Sapphire Substrates
| tem | PAM-T-GaN-100-SI |
| Dimension | 100 ±0.1 mm |
| Thickness | 1.8 ±0.5 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 105 Ω·cm |
| Carrier Concentration | >1x1018cm-3(≈doping concentration) |
| Mobility | ~ 200cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 1.8 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; |
| Back side: etched or polished. | |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
1.2 2 inch Semi-insulating GaN/Sapphire Substrates
| Item | PAM-T-GaN-50-SI |
| Dimension | 50.8 ±0.1 mm |
| Thickness | 1.8 ±0.5 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 105 Ω·cm |
| Carrier Concentration | >1x1018cm-3(≈doping concentration) |
| Mobility | ~ 200cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 1.8 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; |
| Back side: etched or polished. | |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
2. List of Semi-insulating GaN on Silicon Template
| Description | Type | Dopant | Substrate | Size | GaN thickness | Surface |
| GaN Template on 4″ Silicon Wafer, GaN film | semi-insulating | — | Si (111) substrates | 4″ | 2um | single side polished |
| GaN Template on 2″ Silicon Wafer, GaN film | semi-insulating | — | Si (111) substrates | 2″ | 2um | single side polished |
