Semi-insulating GaN on Sapphire or Silicon Template
Ganwafer’s Template Products includes 4” and 2” Semi-Insulating GaN on Sapphire/Silicon Substrates, which are epi-ready.
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Description
1. Specifications of Semi-Insulating GaN on Sapphire Template
1.1 4 inch Semi-Insulating GaN/Sapphire Substrates
| tem | GANW-T-GaN-100-SI |
| Dimension | 100 ±0.1 mm |
| Thickness | 1.8 ±0.5 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 105 Ω·cm |
| Carrier Concentration | >1x1018cm-3(≈doping concentration) |
| Mobility | ~ 200cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 1.8 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; |
| Back side: etched or polished. | |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
1.2 2 inch Semi-insulating GaN/Sapphire Substrates
| Item | GANW-T-GaN-50-SI |
| Dimension | 50.8 ±0.1 mm |
| Thickness | 1.8 ±0.5 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 105 Ω·cm |
| Carrier Concentration | >1x1018cm-3(≈doping concentration) |
| Mobility | ~ 200cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 1.8 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; |
| Back side: etched or polished. | |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
2. List of Semi-insulating GaN on Silicon Template
| Description | Type | Dopant | Substrate | Size | GaN thickness | Surface |
| GaN Template on 4″ Silicon Wafer, GaN film | semi-insulating | — | Si (111) substrates | 4″ | 2um | single side polished |
| GaN Template on 2″ Silicon Wafer, GaN film | semi-insulating | — | Si (111) substrates | 2″ | 2um | single side polished |
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. From August 1, 2023 on, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding!
