Semi-insulating GaN on Sapphire or Silicon Template

Semi-insulating GaN on Sapphire or Silicon Template

PAM-XIAMEN’s Template Products includes  4” and 2” Semi-Insulating GaN on Sapphire/Silicon Substrates, which are epi-ready.

Description

1. Specifications of Semi-Insulating GaN on Sapphire Template

1.1  4 inch Semi-Insulating GaN/Sapphire Substrates

tem PAM-T-GaN-100-SI
Dimension 100 ±0.1 mm
Thickness 1.8 ±0.5 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type Semi-Insulating
Resistivity (300K) > 105 Ω·cm
Carrier Concentration >1x1018cm-3(≈doping concentration)
Mobility ~ 200cm2 / V·s
Dislocation Density < 5x108cm-2(estimated by FWHMs of XRD)
Structure 1.8 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

1.2  2 inch Semi-insulating GaN/Sapphire Substrates

Item PAM-T-GaN-50-SI
Dimension 50.8 ±0.1 mm
Thickness 1.8 ±0.5 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type Semi-Insulating
Resistivity (300K) > 105 Ω·cm
Carrier Concentration >1x1018cm-3(≈doping concentration)
Mobility ~ 200cm2 / V·s
Dislocation Density < 5x108cm-2(estimated by FWHMs of XRD)
Structure 1.8 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

2. List of Semi-insulating GaN on Silicon Template

Description  Type Dopant Substrate Size GaN thickness Surface
GaN Template on 4″ Silicon Wafer, GaN film semi-insulating Si (111) substrates 4″ 2um single side polished
GaN Template on 2″ Silicon Wafer, GaN film semi-insulating Si (111) substrates 2″ 2um single side polished

    has been added to your cart:
    Checkout