GaAs Wafer

GaAs Wafer

Single crystal Gallium Arsenide (GaAs) wafer is offered from PAM-XIAMEN – a leading GaAs substrate supplier for opto-electronics and micro-electronics industry for making LD, LED, microwave circuit and solar cell applications. The gallium arsenide substrates are in diameter range from 2″ to 6″ in various thicknesses and orientations. We offer single crystal GaAs substrates produced by VGF method, allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality.

Description

1. Specifications of GaAs Wafer

1.1 Gallium Arsenide (GaAs) Wafer for LED Applications

Item Specifications Remarks
Conduction Type SC/n-type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Silicon Zn available
Wafer Diameter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000cm2/V.sec
Etch Pit Density <5000/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~450um
Epitaxy Ready Yes
Package Single wafer container or cassette

 

1.2 Single Crystal Gallium Arsenide Substrate for LD Applications

Item Specifications Remarks
Conduction Type SC/n-type
Growth Method VGF
Dopant Silicon
Wafer Diameter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15°off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000 cm2/V.sec
Etch Pit Density <500/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~350um
Epitaxy Ready Yes
Package Single wafer container or cassette

 

1.3 Semi-insulating Gallium Arsenide Wafer for Microelectronics Applications

Item Specifications Remarks
Conduction Type Insulating
Growth Method VGF
Dopant Undoped
Wafer Diameter 2, 3 & 4 inch  Ingot available
Crystal Orientation (100)+/- 0.5°
OF EJ, US or notch
Carrier Concentration n/a
Resistivity at RT >1E7 Ohm.cm
Mobility >5000 cm2/V.sec
Etch Pit Density <8000 /cm2
Laser Marking upon request
Surface Finish P/P
Thickness 350~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

 

1.4 150mm GaAs Wafer Substrate, Semi-insulated for Microelectronics Applications (including Fabrication of THz Photoconductive Antennas)

Item Specifications Remarks
Conduction Type Semi-insulating  –
Grow Method VGF  –
Dopant Undoped  –
Type N  –
Diameter(mm) 150±0.25  –
Orientation (100)0°±3.0°  –
NOTCH Orientation (010)±2°  –
NOTCH Depth(mm) (1-1.25)mm   89°-95°  –
Carrier Concentration please consult our sales team  –
Resistivity(ohm.cm) >1.0×107 or 0.8-9 x10-3  –
Mobility(cm2/v.s) please consult our sales team  –
Dislocation please consult our sales team  –
Thickness(µm) 675±25  –
Edge Exclusion for Bow and Warp(mm) please consult our sales team  –
Bow(µm) please consult our sales team  –
Warp(µm) ≤20.0  –
TTV(µm) ≤10.0  –
TIR(µm) ≤10.0  –
LFPD(µm) please consult our sales team  –
Polishing P/P  Epi-Ready  –

 

1.5 2″ LT-GaAs (Low Temperature-Grown Gallium Arsenide) Wafer Specifications

Item Specifications
Conduction Type Semi-insulating
Grow Method VGF
Dopant Undoped
Type N
Diameter(mm) 150±0.25
Orientation (100)0°±3.0°
NOTCH Orientation (010)±2°
NOTCH Depth(mm) (1-1.25)mm   89°-95°
Carrier Concentration please consult our sales team
Resistivity(ohm.cm) >1.0×10or 0.8-9 x10-3
Mobility(cm2/v.s) please consult our sales team
Dislocation please consult our sales team
Thickness(µm) 675±25
Edge Exclusion for Bow and Warp(mm) please consult our sales team
Bow(µm) please consult our sales team
Warp(µm) ≤20.0
TTV(µm) ≤10.0
TIR(µm) ≤10.0
LFPD(µm) please consult our sales team
Polishing P/P  Epi-Ready

 

Gallium arsenide substrate can be used as a substrate material for epitaxial growth of other semiconductors such as aluminum gallium arsenide (AlGaAs) and indium gallium arsenide (InGaAs). Direct gallium arsenide band gap can effectively emit and absorb light. Gallium arsenide single crystal wafer has extremely high electron mobility, which allows GaAs transistors to work at frequencies exceeding 250 GHz and reduces noise. High frequencies tend to reduce electrical signal interference in electronic circuits.

2. Q&A of Gallium Arsenide Wafer

2.1 What is the GaAs Process?

Before device fabrication, GaAs wafers must be completely cleaned to remove any damage occurred during the dicing process. After cleaning, the gallium arsenide wafers are chemically mechanically polished/plaranrized (CMP) for the final material removal stage. This CMP process allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. And then, the gallium arsenide semiconductor wafer is ready for fabrication.

2.2 What is GaAs Wafer?

Gallium arsenide (GaAs) is a compound of gallium and arsenic, which is a III-V direct band gap semiconductor with a zinc blende crystal structure.

Gallium arsenide wafer is an important semiconductor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65×10-10m, a melting point of 1237℃ and a band gap of 1.4 EV. GaAs single crystal can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because the electron mobility of gallium arsenide substrate is 5-6 times larger than that of silicon, gallium arsenide wafer for sale has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. Due to the excellent gallium arsenide properties, it can also be used to make bulk effect devices.

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