FZ Silicon Wafer

FZ Silicon Wafer

The size of float zone (FZ) silicon (Si) wafers for sale is mainly 8 inches and 6 inches. Compared with silicon wafers made by Czochralski (CZ) method, the biggest feature of float zone wafer is that the resistivity is relatively high, the purity is higher, and it can withstand high voltage. However, it is difficult to produce large-size FZ silicon wafers and the mechanical properties are poor. Therefore, there is few floating-zone grown silicon wafer used in integrated circuits. The FZ Wafer is prepared by float zone process. Because of no crucible during the float zone silicon crystal growth, the pollution from crucible is avoided, and the suspension zone melting can be used for multiple purifications, so the purity of FZ silicon ingot is high, and the conductivity of FZ-Silicon substrate can reach 1000 Ω-cm or more.

Description

FZ Si wafers produced by FZ wafer suppliers are used for manufacturing power electronic devices, photodiodes, ray detectors, infrared detectors, etc. The oxygen content of FZ silicon wafer is 2~3 orders of magnitude lower than that of CZ silicon. Since there is no deposition formed by oxygen, the mechanical strength of float zone silicon wafer is not so good as well as silicon wafer CZ grown. In addition, warpage and defects are easy to generate during the fabrication process. Adding nitrogen is one solution to improve the wafer strength during the float zone silicon crystal growth. More FZ monocrystalline silicon specifications are as follows:

1. 8 inch High Resistivity Float Zone Silicon Wafer with SSP or DSP

8 inch FZ Silicon Wafer with SSP or DSP & Hight Resistivity
Item Parameters
Material Monocrystalline Silicon
Grade Prime Grade
Growth Method FZ
Diameter 8″(200.0±0.2mm)
Conductivity type N Type N Type P Type
Dopant Phosphorus Phosphorus Boron
Orientation [100]±0.5°
Thickness 625+/- 5µm 725±25μm 725±25μm
Resistivity >8,000-14,000Ωcm >10,000Ωcm 5,000-10,000Ωcm
RRV <40% (ASTM F81 Plan C)
SEMI STD Notch SEMI STD Notch
Surface Finish 1SP, SSP
One-Side-Epi-Ready-Polished
Back Side Etched
Edge Rounded Per SEMI Standard
Metrology edge exclusion(lpd’s, mechanical parameters) 3 mm
Particle LPDs >=  0,30 µm (including COP’s) <=25
LPDs >=  0,20 µm (including COP’s) <=30
LPDs >=  0,16 µm (including COP’s) <=60
Roughness <0.5nm
TTV <1.5um <10um <6um
Bow/Warp <35um Bow<40µm, Warp<60µm <40um
TIR <5µm
Oxygen Content 11-15 PPMA
Carbon Content <2E16/cm3
Site Flatness SFQD 20X20mm: 0.40um
MCC Lifetime >1,000μs >1,000μs >1,000μs
Surface Metal Contamination
(Al,Ca,Cu,Fe,Ni,Zn,Cr,Na)
≤5E10 atoms/cm2   (Al,Ca,Cu,Fe,Ni,Zn,Cr,Na) Max 5E10/cm2
Dislocation Density SEMI STD SEMI STD 500 max/ cm2
Chips, scratches, bumps, haze, touch marks, orange peel, pits, cracks, dirt, contamination All None
Laser Mark SEMI STD Option Laser Serialized:
Shallow laser
Along The Flat
On The Front Side

 

2. 6 inch FZ Silicon Wafer

6 inch FZ Silicon Wafer
Item Parameters
Material Monocrystalline Silicon
Grade Prime Grade
Growth Method FZ
Diameter 6″(150 ± 0.5mm)
Conductivity type Intrinsic N Type P Type
Dopant Undoped Phosphorus Boron
Orientation <100>±0.5° [100]±0.5° (111)±0.5°
Thickness 625±15μm 675±10μm
1,000±25µm
875±25μm
1,000±25µm
Resistivity >20,000Ωcm 6,000-10,000 5,000-10,000Ωcm
RRV <40% (ASTM F81 Plan C)
Primary Flat One SEMI Flat (57.5mm) SEMI STD SEMI Notch @ 110 ± 1°
Secondary Flat N/A SEMI STD N/A
Surface Finish Front side finish Mirror Polish
Back side finish Mirror Polish
Front side finish Mirror Polish
Back side finish Mirror Polish
One Side Polished
Back Side Acid Etched
Edge Rounded Per SEMI Standard
Particle <20counts @0.3μm
Roughness <0.5nm
TTV <10um <10um <12um
Bow/Warp <30um <40um <60um
TIR <5µm
Oxygen Content <2E16/cm3
Carbon Content <2E16/cm3
OISF <50/cm²
STIR (15x15mm) <1.5µm
MCC Lifetime >1,000μs
Surface Metal Contamination
Na, Al, K, Fe, Ni, Cu, Zn
≤5E10 atoms/cm2
Dislocation Density 500 max/ cm2
Chips, scratches, bumps, haze, touch marks, orange peel, pits, cracks, dirt, contamination Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on the back side: all none
Laser Mark Along The Flat
On The Front Side,Option Laser Serialized:
Shallow laser

 

3. 6 inch FZ+NTD Silicon Wafer with Minority Carrier Lifetime 300μs

6 inch FZ+NTD Silicon Wafer with  Minority Carrier Lifetime 300μs
Description Requirements
General characteristics
Method of growing Grown by irradiating undoped Float Zone silicon with neutrons      FZ+NTD
Orientation <111> +/- 1 deg
Typ of conductivity N
Impurity substance P
Area of the control 3 mm from border of a wafer are not supervised
The electrical  characteristics
Resistivity constant 100 Ohm.cm ±8%
Radial dispersion of
resistivity constant
No more than 4 %
Minority Carrier
Lifetime min
300 mcs
The chemical characteristics
Content of oxygen 0.2 ppma
Content of carbon 0.2 ppma
Perfection of structural
Dislocation content free
Defect density of package No more than 1*102 1/cm2
Microdefect density No more than 1*104 1/cm2
Swirls free
Characteristic of wafers preparation
Back side Lapped and etching
Geometrics
Diameter 152,4+1 mm
Stretch of primary cut 30-35 mm
Breadth of facet 0,1-0,25 mm production on a «former»
Thickness 625 um
Polythickness (TTV) no more than 5 um
Warpage No more than 35 um
Variation in plane No more than 5 um
Surface of work condition Polished
Scratchs Deficiency
Microscratch (risk) Total length no more than 0,5 diameters of a wafer
Contamination Deficiency
Dulling HAZE≤5 ppm
Scabbings Deficiency
Orange peel Deficiency
Saw blade defect Deficiency
Surface of not work condition Ground, Etched
Scabbings border Deficiency
Crack such “crow’s claw” Deficiency
Contamination Deficiency
Saw blade defect Deficiency
Scratchs Total length no more than 0,5 diameters of a wafer
Speck from non-uniform etching Deficiency

 

4. 6 inch FZ+NTD Silicon Wafer with Orientation (111) & Thickness 625μm

6 inch FZ+NTD Silicon Wafer with Orientation (111) & Thickness 625μm
Description Unit Value Standard of Control Method
Method FZ+NTD
Type N
Dopant P ( Phosphorus)
Orientation <111> +/- 1 deg ASTM F 26
Diameter mm 152.4±1 Caliber
Thickness, min um 625
Resistivity Ohm*cm 100 4-point probe ASTM F 84
Radial Resistivity Variation, max % 8 ASTM F 81 Plan C
Minority Carrier Lifetime, min mcs 300 ASTM F1535-94
Carbon Content, max ppma 0.2 ASTM F 1391-93
Oxygen  Content/ ppma 0.2 ASTM F 1188-93a
Front side Polished
Back side Ground, Etched
Swirls none F47
Dislocations none F47

 

5. 6 inch FZ+NTD Silicon Wafer with Thickness 300μm

6 inch FZ+NTD Silicon Wafer with Thickness 300μm
Description Requirements
Diameter 150mm±0.5mm
Thickness 300um
Growth method FZ+NTD
Orientation (100)
Type: N N
Dopant P
Resistivity 85 Ohm*cm ±4%
Surface Finish Single side polished
Flats 1, SEMI-Std, length 30-35mm
TTV ≤5um
Warp ≤35um
Bow ≤5um
Oxygen content ≤1.0*10^18cm-3
Carbon content ≤5.0*10^16cm-3
Dislocations None
Slip None
Haze None
Scratches None
Edge Chips None
Dimples None
Orange Peel None
Cracks/Fractures None

 

6. 6 inch FZ+NTD Silicon Ground Ingot

6 inch FZ+NTD Silicon Ground Ingot
Parameter Unit Value Standard of Control Method
Method FZ+NTD
Type N
Dopant P ( Phosphorus)
Orientation <111> +/- 1 deg ASTM F 26
Diameter mm 150.0+0.5 Caliber
Resistivity Ohm*cm 170 4-point probe ASTM F 84
Radial Resistivity Variation,  max % 8 ASTM F 81 Plan C
Minority Carrier Lifetime, min mcs 300 ASTM F1535-94
Carbon Content, max ppma 0.2 ASTM F 1391-93
Oxygen  Content ppma 22 ASTM F 1188-93a
Swirls none F47
Dislocations none F47

 

7. 4 inch FZ Silicon Wafer

4 inch FZ Silicon Wafer
Item Parameters
Material Monocrystalline Silicon
Grade Prime Grade
Growth Method FZ
Diameter 4″(100±0.4mm)
Conductivity type Intrinsic N Type P Type
Dopant Undoped Phosphorus Boron
Orientation <111>±0.5° [110]±0.5° (100)±1°
Thickness 500±25μm
Resistivity >10,000Ωcm >5,000Ωcm 5,000-10,000Ωcm
RRV <40% (ASTM F81 Plan C)
Primary Flat SEMI STD Flats
Secondary Flat SEMI STD Flats
Surface Finish One-Side-Epi-Ready-Polished,
Back Side Etched
Edge Rounded Per SEMI Standard
Particle <20counts @0.3μm
Roughness <0.5nm
TTV <10um
Bow/Warp <40um
TIR <5µm
Oxygen Content <2E16/cm3
Carbon Content <2E16/cm3
OISF <50/cm²
STIR (15x15mm) <1.5µm
MCC Lifetime >1,000μs
Surface Metal Contamination Fe,Zn, Cu,Ni, K,Cr ≤5E10 atoms/cm2
Dislocation Density 500 max/ cm2
Chips, scratches, bumps, haze, touch marks, orange peel, pits, cracks, dirt, contamination All None
Laser Mark Along The Flat

On The Front Side,

Option Laser Serialized:

Shallow laser

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