Semi-Insulating Freestanding GaN Substrate

Semi-Insulating Freestanding GaN Substrate

Semi-insulating Freestanding GaN (Gallium Nitride) Substrate is mainly for RF device based on HEMT structure. PAM-XIAMEN, a semi-insulating freestanding GaN substrate manufacturer, has formed the manufacturing technology for freestanding GaN semi-insulating substrate wafer. The substrate wafer is for UHB-LED and LD. Our GaN substrate grown by hydride vapor phase epitaxy (HVPE) has low defect density and less or free macro defect density. More specification of GaN semi-insulating substrate, please see below:

Description

1. Specification of Semi-insulating Freestanding GaN Substrate

1.1 4″ Semi-Insulating GaN Wafer Substrate

Item PAM-FS-GaN100-SI
Conduction Type Semi-Insulating
Size 4″(100)+/-1mm
Thickness 480+/-50um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (10-10)+/-0.5°
Primary Flat Length 32+/-1mm
Secondary Flat Location (1-210)+/-3°
Secondary Flat Length 16+/-1mm
Resistivity(300K) >10^6Ω·cm
Dislocation Density <5×106cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
Surface Finish Front Surface: Ra<=0.3nm.Epi-ready polished
 Back Surface: 1. Fine ground
                           2. Polished
Usable Area ≥ 90 %

 

1.2  2″ Semi-Insulated GaN Free-standing Substrate

Item PAM-FS-GaN50-SI
Conduction Type Semi-Insulating
Size 2″(50.8)+/-1mm
Thickness 400+/-50um
Orientation C-axis(0001) off angle toward A-axis 0.35°+/-0.15°
Primary Flat Location (10-10)+/-0.5°
Primary Flat Length 16+/-1mm
Secondary Flat Location (1-210)+/-3°
Secondary Flat Length 8+/-1mm
Resistivity(300K) >10^6Ω·cm
Dislocation Density <5×106cm-2
FWHM <=100arc.sec
TTV <=15um
BOW <=+/-20um
Surface Finish Front Surface: Ra<=0.3nm. Epi-ready polished
 Back Surface: 1. Fine ground
                           2. Polished.
Usable Area ≥ 90 %

 

2. XRD Rocking Curves-GaN Material-TEST REPORT

A test report can show the wafer quality and the concordance between description and data of wafers. After the manufacturing process, we will test the wafer characterization:

* Test wafer surface roughness by atomic force microscope;

* Test conductivity type by Roman spectra instrument;

* Test wafer resistivity by non-contact resistivity testing equipment;

* Test micropipe density of wafer by polarizing microscope.

We will clean and pack the wafers in 100 class clean environment after testing. If the qualities of the wafers do not meet the custom spec, we will take it off after the testing.

The half-height full width (FWHM) is the spectral curve width measured between those points on the Y-axis. Following diagram shows the XRD Rocking Curves of GaN Material tested:

XRD Rocking Curves of GaN Material

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