LED Epi on Sapphire

LED Epi on Sapphire

GaN LED epitaxy wafer is offered by LED Epi on Sapphire Manufacturer – Ganwafer for LED and laser diodes (LD) application, such as for micro LED or UV LED researches. Epitaxy wafer for LED is by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.


GaN on Al2O3 – 2” epi wafer Specification (LED Epitaxial wafer):

UV:    365+/-5nm

UV:    405+/-5nm

White: 445-460nm

Blue:  465-475nm

Green: 510-530nm

1. Blue or Green LED Epi on Sapphire Wafer

1.1 Structure of Micro LED Eipitaxy on Sapphire Wafer

Structure layers Thickness(μm)
p-GaN 0.2
p-AlGaN 0.03
InGaN/GaN(active area) 0.2
n-GaN 2.5
u-GaN 3.5
Al2O3 (Substrate)


1.2 Specification of Blue or Green LED Epi Wafer on Sapphire Substrate

Item Requirememt range
Growth Technology MOCVD
Wafer Diameter 2″ or 4″(take 4″example below)
Wafer substrate material Flat Sapphire Substrate or Patterned Sapphire Substrate
Substrate diameter 100mm +/-0.25mm
Substrate thickness 650um +/-25um
c-plane(0001),offcut angle towards m-plane 0.2 deg +/-0.1 deg
single primary flat length 30mm +/-1mm
Flat orientation a-plane
PL emission wavelength 450-460nm(blue)
PL wavelength FWHM 17-18(blue)
XRD rocking curve (002) =<200 +/-20
XRD rocking curve (102) =<200 +/-20
Front side surface ,AFM(5*5 um2) Ra <0.5nm
wafer bowing <45 +/-10
Total LED thickness 5.5um +/-0.2um
Total thickness variation 3%
Defect density (macroscopic) <5E8/cm-2


1.3 Test Data of LED Epitaxy

002 102 In_comp InGaN_THK GaN_THK Pair_THK
178.6 193.2 9.48 41.7 82.5 124.2


WLP_Avge WLP_Std PI_Avge PI_Std WLD_Avge WLD_Std INT_Avge INT_Std
448.34 3.729 1.673 0.494 454.999 2.747 117.883 0.167


HW_Avge HW_Std TH_Avge TH_Std PR_Avge PR_Std LOP_Avge LOP_Std
16.387 6.1 0.092 290.56 7.176 136.312 0.874 2060


2. UV LED Epi on Sapphire

Wafer structure, 365nm or 405nm:






Undoped AlGaN

Sapphire substrate


The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. From August 1, 2023 on, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding!

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