LED Epi on Sapphire
GaN LED epitaxy wafer is offered by LED Epi on Sapphire Manufacturer – Ganwafer for LED and laser diodes (LD) application, such as for micro LED or UV LED researches. Epitaxy wafer for LED is by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
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Description
GaN on Al2O3 – 2” epi wafer Specification (LED Epitaxial wafer):
UV: 365+/-5nm
UV: 405+/-5nm
White: 445-460nm
Blue: 465-475nm
Green: 510-530nm
1. Blue or Green LED Epi on Sapphire Wafer
1.1 Structure of Micro LED Eipitaxy on Sapphire Wafer
Structure layers | Thickness(μm) |
p-GaN | 0.2 |
p-AlGaN | 0.03 |
InGaN/GaN(active area) | 0.2 |
n-GaN | 2.5 |
u-GaN | 3.5 |
Al2O3 (Substrate) |
1.2 Specification of Blue or Green LED Epi Wafer on Sapphire Substrate
Item | Requirememt | range |
Growth Technology | MOCVD | |
Wafer Diameter | 2″ or 4″(take 4″example below) | |
Wafer substrate material | Flat Sapphire Substrate or Patterned Sapphire Substrate | |
Substrate diameter | 100mm | +/-0.25mm |
Substrate thickness | 650um | +/-25um |
c-plane(0001),offcut angle towards m-plane | 0.2 deg | +/-0.1 deg |
single primary flat length | 30mm | +/-1mm |
Flat orientation | a-plane | |
PL emission wavelength | 450-460nm(blue) | |
520-530nm(Green) | ||
PL wavelength FWHM | 17-18(blue) | |
30-35(Green) | ||
XRD rocking curve (002) | =<200 | +/-20 |
XRD rocking curve (102) | =<200 | +/-20 |
Front side surface ,AFM(5*5 um2) Ra | <0.5nm | |
wafer bowing | <45 | +/-10 |
Total LED thickness | 5.5um | +/-0.2um |
Total thickness variation | 3% | |
Defect density (macroscopic) | <5E8/cm-2 |
1.3 Test Data of LED Epitaxy
002 | 102 | In_comp | InGaN_THK | GaN_THK | Pair_THK |
178.6 | 193.2 | 9.48 | 41.7 | 82.5 | 124.2 |
WLP_Avge | WLP_Std | PI_Avge | PI_Std | WLD_Avge | WLD_Std | INT_Avge | INT_Std |
448.34 | 3.729 | 1.673 | 0.494 | 454.999 | 2.747 | 117.883 | 0.167 |
HW_Avge | HW_Std | TH_Avge | TH_Std | PR_Avge | PR_Std | LOP_Avge | LOP_Std |
16.387 | 6.1 | 0.092 | 290.56 | 7.176 | 136.312 | 0.874 | 2060 |
2. UV LED Epi on Sapphire
Wafer structure, 365nm or 405nm:
P-AlGaN
AlGaN EBL
AlGaN/InGaN MOWs
N-SLS
N-AlGaN
Undoped AlGaN
Sapphire substrate
Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. From August 1, 2023 on, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding!