M Face Freestanding GaN Substrate

M Face Freestanding GaN Substrate

PAM-XIAMEN offers M Plane GaN Freestanding Substrate including Si doped, undoped and semi-insulating one. The detail specification of m-plane GaN single crystal substrate is as below:

Description

1. Si doped Bulk M-Plane GaN Substrate

Item PAM-FS-GAN M-N
Dimension 5 x 10 mm2
Thickness 350 ±25 µm  430 ±25 µm
Orientation M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type N-type
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW -10 µm ≤ BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density From 1 x 10 5 to 5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

2. Un-doped M-Face Freestanding GaN Substrate

Item PAM-FS-GAN M-U
Dimension 5 x 10 mm2
Thickness 350 ±25 µm  430 ±25 µm
Orientation M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type N-type
Resistivity (300K) < 0.1 Ω·cm
TTV ≤ 10 µm
BOW -10 µm ≤ BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density From 1 x 10 5 to 5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

3. Semi-insulating M Plane Freestanding GaN Substrate

Item PAM-FS-GAN M-SI
Dimension 5 x 10 mm2
Thickness 350 ±25 µm  430 ±25 µm
Orientation M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type Semi-Insulating
Resistivity (300K) >106 Ω·cm
TTV ≤ 10 µm
BOW -10 µm ≤ BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density From 1 x 10 5 to 5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

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