M Face Freestanding GaN Substrate
Ganwafer offers M Plane GaN Freestanding Substrate including Si doped, low doped and semi-insulating one. The detail specification of m-plane GaN single crystal substrate is as below:
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Description
1. Si doped Bulk M-Plane GaN Substrate
| Item | GANW-FS-GAN M-N |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | M plane (1-100) off angle toward A-axis 0 ±0.5° |
| M plane (1-100) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.05 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
2. Un-doped M-Face Freestanding GaN Substrate
| Item | GANW-FS-GAN M-U |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | M plane (1-100) off angle toward A-axis 0 ±0.5° |
| M plane (1-100) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.1 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
3. Semi-insulating M Plane Freestanding GaN Substrate
| Item | GANW-FS-GAN M-SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | M plane (1-100) off angle toward A-axis 0 ±0.5° |
| M plane (1-100) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | >106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. From August 1, 2023 on, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding!
