M Face Freestanding GaN Substrate
Ganwafer offers M Plane GaN Freestanding Substrate including Si doped, undoped and semi-insulating one. The detail specification of m-plane GaN single crystal substrate is as below:
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Description
1. Si doped Bulk M-Plane GaN Substrate
| Item | GANW-FS-GAN M-N |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | M plane (1-100) off angle toward A-axis 0 ±0.5° |
| M plane (1-100) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.05 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
2. Un-doped M-Face Freestanding GaN Substrate
| Item | GANW-FS-GAN M-U |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | M plane (1-100) off angle toward A-axis 0 ±0.5° |
| M plane (1-100) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.1 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
3. Semi-insulating M Plane Freestanding GaN Substrate
| Item | GANW-FS-GAN M-SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | M plane (1-100) off angle toward A-axis 0 ±0.5° |
| M plane (1-100) off angle toward C-axis -1 ±0.2° | |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | >106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
