Ganwafer has 25+ experience in manufacturing semiconductor wafer materials, including SiC, GaN, III-V compound semiconductor and etc. We closely cooperate with researchers and chip manufacturers to constantly develop new products and semiconductor fabrication technologies to meet their special needs, and perfect our core abilities.

Ganwafer is mainly focused on the following semiconductor process technologies for epitaxial growth:

1. Hydride Vapour Phase Epitaxy (HVPE) Technology

The HVPE technique enables the production of crack-free, high-quality GaN epilayers (for example, in a GaN template grown on sapphire, typical dislocation densities can be as low as 107/cm3.). Another advantage of HVPE is to grow thick, high-quality AlGaN and AlN for optoelectronic and RF electronic devices. Unlike semiconductor technology of MOCVD, the HVPE process does not involve a metal organic source, thus providing a carbon-free epitaxial growth environment. In addition, the use of gaseous hydrogen chloride also provides an impurity self-cleaning effect, resulting in lower background impurities and more efficient doping levels in the epitaxial layer.

2. Metal Organic Chemical Vapor Deposition (MOCVD) Technology

MOCVD is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). MOCVD uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth source materials, and conducts vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V main groups, II-VI subgroup compound semiconductors and thin-layer single-crystal materials of their multicomponent solid solutions.

There is a wide range of applications of MOCVD semiconductor technology: It can be for growing almost all compounds and alloy semiconductors; it is very suitable for growing various heterostructure materials; Ultra-thin epitaxial layers can be grown, and a very steep interface transition can be obtained. Moreover, the semiconductor wafers can be grown by MOCVD in mass production with high purity and large area uniformity.

3. Molecular Beam Epitaxy(MBE) Technology

Compared with other epitaxy methods, MBE the following advantages:

MBE is actually an atomic-scale processing technique that is especially suitable for growing superlattice materials. The growth rate is slow, about one single atomic layer is grown per second, and the 2D mode growth is truly realized, and it is easy to obtain a smooth and uniform surface and interface, which is conducive to the precise control of thickness, structure, composition, and the formation of steep heterostructures.

The temperature of epitaxial growth is low, thus reducing the self-doping diffusion of substrate impurities in the epitaxial layer and the interfacial inter-diffusion effect in the multi-layer structure.

The composition and structural integrity of the epitaxial layer by MBE are conducive to the smooth progress of scientific research and growth.

MBE is an ultra-high vacuum physical deposition process. In-situ doping of different doping sources during the growth process is easy to achieve. The shutter can be used to instantaneously control the growth and interruption, and realize the rapid adjustment of doping types and concentrations.

4. Semiconductor Future Technology

Our semiconductor foundry technology is developing in integrated optics and integrated optoelectronics, semiconductor superlattices and quantum wires, quantum dot devices, semiconductor quantum information devices, and spintronic devices. We believe that these technologies will be matured and widely applied in the near future.

To provide customer with premium semiconductor wafers, we will choose most suitable semiconductor wafer technology for manufacturing based on the materials and its applications.