Indium Gallium Arsenide Phosphide (InGaAsP) Thin Film

indium gallium arsenide phosphide wafer

Indium Gallium Arsenide Phosphide (InGaAsP) Thin Film

The indium gallium arsenide phosphide (GalnAsP) quaternary alloy semiconductor material matched with indium phosphide (InP) single crystal substrate lattice has an adjustable band gap range of 0.75~1.35eV. Because the indium gallium arsenide phosphide energy gap covers the low loss bands of 1.33um and 1.55um for quartz fiber signal transmission in current optical communication, it is often used in the structure of indium phosphide heterogeneous junction bipolar transistor, vertical cavity surface emission laser and other optoelectronic devices. Ganwafer is able to provide III-V epitaxial wafer of InP/InGaAsP and grow custom structure. Specific structures are as follows:

1. Specifications of Indium Gallium Arsenide Phosphide Wafer

No. 1 InP based InGaAsP Wafer

GANW190513-INGAASP

Epi-Layer Material Dopant Thickness  
Epi-layer 7 InP undoped  
Epi-layer 6g InGaAsP 75nm
Epi-layer 6f InGaAsP
Epi-layer 6e InGaAsP
Epi-layer 6d InGaAsP lattice matched, emitting at 1275 nm
Epi-layer 6c InGaAsP
Epi-layer 6b InGaAsP
Epi-layer 6a InGaAsP
Epi-layer 5 InP  
Epi-layer 4g InGaAsP 75nm
Epi-layer 4f InGaAsP undoped
Epi-layer 4e InGaAsP
Epi-layer 4d InGaAsP
Epi-layer 4c InGaAsP
Epi-layer 4b InGaAsP
Epi-layer 4a InGaAsP lattice matched, emitting at 1000 nm
Epi-layer 3 InP  
Epi-layer 2g InGaAsP
Epi-layer 2f InGaAsP
Epi-layer 2e InGaAsP
Epi-layer 2d InGaAsP
Epi-layer 2c InGaAsP 10nm
Epi-layer 2b InGaAsP  
Epi-layer 2a InGaAsP undoped lattice matched, emitting at 1000 nm
  Epi-layer 1 InP undoped 300nm  
Substrate InP:S[100], Nc = (3-8)E18/cc, EPD < 5000/cm2      

 

No.2 InGaAsP / InP Epiwafers

GANW190709-InGAASP

Epi-Layer Material Dopant Thickness  
Epi-layer 7 InP undoped  
Epi-layer 6g InGaAsP
Epi-layer 6f InGaAsP 5nm
Epi-layer 6e InGaAsP
Epi-layer 6d InGaAsP
Epi-layer 6c InGaAsP lattice matched, emitting at 1040 nm
Epi-layer 6b InGaAsP
Epi-layer 6a InGaAsP
Epi-layer 5 InAlAs  
Epi-layer 4g InGaAsP
Epi-layer 4f InGaAsP undoped 5nm
Epi-layer 4e InGaAsP
Epi-layer 4d InGaAsP
Epi-layer 4c InGaAsP
Epi-layer 4b InGaAsP lattice matched, emitting at 1350 nm
Epi-layer 4a InGaAsP 75nm
Epi-layer 3 InAlAs  
Epi-layer 2g InGaAsP
Epi-layer 2f InGaAsP 5nm
Epi-layer 2e InGaAsP
Epi-layer 2d InGaAsP
Epi-layer 2c InGaAsP
Epi-layer 2b InGaAsP  
Epi-layer 2a InGaAsP undoped lattice matched, emitting at 1040 nm
  Epi-layer 1 InP undoped 300nm  
Substrate InP:S[100], Nc = (3-8)E18/cc, EPD < 5000/cm2      

 

No. 3 InGaAsP Quantum Well Structure

GANW190527-INGAASP

Epi-Layer Material Dopant Thickness  
Epi-layer 11 n-InP capping layer Si  
Epi-layer 10 n-1.24Q InGaAsP, delta doping  
Epi-layer 9 i-1.24Q InGaAsP  
Epi-layer 8 1.30Q (-0.5%) InGaAsP barrier λc=1.55um
Epi-layer 7 1.65Q (+0.8%) InGaAsP well
Epi-layer 6 1.30Q (-0.5%) InGaAsP barrier
Epi-layer 5 i-1.24Q InGaAsP 300A  
Epi-layer 4 p-1.24Q InGaAsP Zn  
Epi-layer 3 p-InP sacrificial layer  
Epi-laye 2 p-InGaAs etch-stop layer 0.4um  
Epi-layer 1 p-buffer InP  
Substrate p-InP      

 

2. FAQ of InGaAsP Wafer

Q1: I have a technical question:

Do you know if InGaAsP with bandgap at 950 nm is resistant to concentrated HCl (hydrochloric acid)?

A: The corrosion for indium gallium arsenide phosphide crystal wafer may be irresistible, but the corrosion rate should be slower.

Q2: I have received your InGaAsP wafer with FWHM 54.5nm (see attached). Is it possible to provide InGaAsP wafer with narrower FWHM (less than 54.5nm)? Possible to 30nm? Or 20nm?

FWHM of InGaAsP Wafer

A: It’s no problem for manufacturing GaInAsP epi wafer with FWHM<54.5nm and what we can guarantee is near 30nm.

Q3: I have used your InGaAsP heterostructure as well as other wafers to make a nano-material light emitting source. Compared with the device made InGaAsP wafer from another company, the device based on your wafer was shown that the average voltage was low, even though put more power (35 vs. 350 μW).

Could you please give us an explanation/opinion about the comparison test result?

A: The difference of GaInAsP epitaxy on P-type InP may be due to the difference of doping concentration between P-type and N-type. We are in accordance with the concentration of your requirements. It is clear that the doping concentration is too high, the optical absorption loss is very large, not structural problem. PL can be much stronger if the doping point is lower. This phenomenon is obviously related to doping.

For more information, please contact us email at sales@ganwafer.com and tech@ganwafer.com.

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