Semipolar Freestanding GaN Substrate
In terms of the growth of longer-wavelength devices such as yellow or even red emitters including LEDs and LDs, (11-22) semi-polar GaN substrate will be the most promising material, although there are still many huge challenges. Maybe these problems can be solved by improving growth technology and structural design. In addition, semipolar GaN grown with (11-22) directly on flat sapphire will be a great advantage for the commercial application of this technology.
Ganwafer offers Freestanding Semipolar GaN bulk Substrate including Si doped, undoped and semi-insulating one with orientation (10-11) and (11-22) respectively. The detail specification of semipolar GaN substrate is as below:
- Description
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Description
1. Si doped Semipolar (10-11) Freestanding GaN Substrate
| Item | GANW-FS-GAN(10-11)-N |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (10-11) plane off angle toward A-axis 0 ±0.5° |
| (10-11) plane off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.05 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
2. Un-doped Semipolar (10-11) Self-Supporting GaN Substrate
| Item | GANW-FS-GAN(10-11)-U |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (10-11) plane off angle toward A-axis 0 ±0.5° |
| (10-11) plane off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.1 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
3. Semi-insulating Free-Standing Semipolar (10-11) GaN Substrate
| Item | GANW-FS-GAN(10-11)-SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (10-11) plane off angle toward A-axis 0 ±0.5° |
| (10-11) plane off angle toward C-axis -1 ±0.2° | |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | >106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
4. Si doped Semipolar (11–22) Free Standing GaN Substrate
| Item | GANW-FS-GAN(11-22)- N |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (11-22) plane off angle toward A-axis 0 ±0.5° |
| (11-22) plane off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.05 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
5. Un-doped Free-Standing Semipolar (11-22) GaN Substrate
| Item | GANW-FS-GAN(11-22)- U |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (11-22) plane off angle toward A-axis 0 ±0.5° |
| (11-22) plane off angle toward C-axis -1 ±0.2° | |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.1 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
6. Semi-insulating Semi-Polar (11-22) GaN Freestanding Substrate
| Item | GANW-FS-GAN(11-22)- SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (11-22) plane off angle toward A-axis 0 ±0.5° |
| (11-22) plane off angle toward C-axis -1 ±0.2° | |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; |
| Back side: Fine Ground or polished. | |
| Dislocation Density | From 1 x 10 5 to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
