P Type GaN on Sapphire or Silicon Template
PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), which are deposited on sapphire/silicon(111) substrates. It includes P type/n type/ semi-insulating GaN/Sapphire or silicon template, available diameters from 2″ up to 6″,and consist of a thin layer of crystalline GaN grown on a sapphire/silicon substrate. Epi-ready templates now available.
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Description
1. Specifications of GaN on Sapphire Template
1.1 4 inch Mg-Doped GaN/Sapphire Substrates
| Item | PAM-T-GaN-100-P |
| Dimension | 100 ±0.1 mm |
| Thickness | 5 ±1 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | P-type |
| Resistivity (300K) | ~ 10 Ω·cm |
| Carrier Concentration | >6X1016CM-3(doping concentration≥10x1020cm-3 |
| Mobility | ~ 10cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 2~2.5 μm pGaN/2~2.5 μm pGaN uGaN/50nm uGaN buffer layer/430±25μm |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; |
| Back side: etched or polished. | |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
1.2 2 inch Mg-Doped GaN/Sapphire Substrates
| Item | PAM-T-GaN-50-P |
| Dimension | 50.8 ±0.1 mm |
| Thickness | 5 ±1 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | P-type |
| Resistivity (300K) | ~ 10 Ω·cm |
| Carrier Concentration | >6X1016CM-3(doping concentration≥10x1020cm-3 |
| Mobility | ~ 10cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 2~2.5 μm pGaN/2~2.5 μm pGaN uGaN/50nm uGaN buffer layer/430±25μm |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; |
| Back side: etched or polished. | |
| Useable Area | > 90% (edge and macro defects exclusion) |
2. Specification of P Type GaN on Silicon Template
| Description | Type | Dopant | Substrate | Size | GaN thickness | Surface |
| GaN Template on 4″ Silicon Wafer, GaN film | P type | Mg doped | Si (111) substrates | 4″ | 2um | single side polished |
| GaN Template on 2″ Silicon Wafer, GaN film | P type | Mg doped | Si (111) substrates | 2″ | 2um | single side polished |
3. 2″ Dia, P Type GaN on Silicon
2 dia, GaN on silicon
GaN layer thickness : 2um
GaN layer: P type, Mg doped.
Structure:GaN on Silicon(111).
Substrate: Silicon(111), p type, 430+/-25um
XRD(102)<700arc.sec
XRD(002)<500arc.sec
Single Side Polished, Epi-ready,Ra<0.5nm
Carrier concentration:5E17~5E18
