P Type GaN on Sapphire or Silicon Template

P Type GaN on Sapphire or Silicon Template

PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), which are deposited on sapphire/silicon(111) substrates. It includes P type/n type/ semi-insulating GaN/Sapphire or silicon template, available diameters from 2″ up to 6″,and consist of a thin layer of crystalline GaN grown on a sapphire/silicon substrate. Epi-ready templates now available.

Description

1. Specifications of GaN on Sapphire Template

1.1 4 inch Mg-Doped GaN/Sapphire Substrates

Item PAM-T-GaN-100-P
Dimension 100 ±0.1 mm
Thickness 5 ±1 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type P-type
Resistivity (300K) ~ 10 Ω·cm
Carrier Concentration >6X1016CM-3(doping concentration≥10x1020cm-3
Mobility ~ 10cm2 / V·s
Dislocation Density < 5x108cm-2(estimated by FWHMs of XRD)
Structure 2~2.5 μm pGaN/2~2.5 μm pGaN uGaN/50nm uGaN buffer layer/430±25μm
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

1.2 2 inch Mg-Doped GaN/Sapphire Substrates

Item PAM-T-GaN-50-P
Dimension 50.8 ±0.1 mm
Thickness 5 ±1 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type P-type
Resistivity (300K) ~ 10 Ω·cm
Carrier Concentration >6X1016CM-3(doping concentration≥10x1020cm-3
Mobility ~ 10cm2 / V·s
Dislocation Density < 5x108cm-2(estimated by FWHMs of XRD)
Structure 2~2.5 μm pGaN/2~2.5 μm pGaN uGaN/50nm uGaN buffer layer/430±25μm
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)

 

2. Specification of P Type GaN on Silicon Template

Description  Type Dopant Substrate Size GaN thickness Surface
GaN Template on 4″ Silicon Wafer, GaN film P type Mg doped Si (111) substrates 4″ 2um single side polished
GaN Template on 2″ Silicon Wafer, GaN film P type Mg doped Si (111) substrates 2″ 2um single side polished

 

3. 2″ Dia, P Type GaN on Silicon

2 dia, GaN on silicon

GaN layer thickness : 2um

GaN layer: P type, Mg doped.

Structure:GaN on Silicon(111).

Substrate: Silicon(111), p type, 430+/-25um

XRD(102)<700arc.sec

XRD(002)<500arc.sec

Single Side Polished, Epi-ready,Ra<0.5nm

Carrier concentration:5E17~5E18

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