Freestanding GaN Substrate

Gallium Nitride (GaN) substrates are grown by hydride vapour phase epitaxy (HVPE) technology. We offer the industry standard pure gallium nitride substrates as per the client’s needs and specifications. GaN substrates are manufactured by a small number of companies at prices excessive to volume production. GaN-based devices are almost completely developed on foreign substrates such as sapphire (Al2O3) and SiC substrate.

PAM-XIAMEN is a leading Freestanding GaN Substrate Manufacturer that produces gallium nitride semiconductor substrate that offers great potential for high-performance devices. PAM-XIAMEN has established the gallium nitride semiconductor technology for free standing GaN single crystal substrate wafer and related III-N Materials, including GaN substrates of various orientations and electrical conductivity, crystalline GaN Wafer, which is for UHB-LED and LD. Our gallium nitride wafers have low defect density.

Our premium quality free-standing GaN crystal substrates are available with low dislocation density and uniform surfaces with no interrupted defects. They are widely used for various applications such as Solid State Lighting, Power Device, Wireless Base Stations, Wireless Broadband Access, Pressure Sensors, Heat Sensors, Automotive Electronics, etc.

As a reputed and professional Freestanding GaN Substrate Supplier, we deliver the products directly from the factory. We ensure that our esteemed clients can get the best deal on high-quality bulk gallium nitride crystal substrates. Our global clients are highly recognized our team as their preferred supplier of GaN crystal substrates because of our superior customer service. Do not hesitate to contact us for more information of our freestanding GaN product.

has been added to your cart:
Checkout