GaN on Silicon HEMT Wafer

GaN on Silicon HEMT Wafer

PAM-XIAMEN offers GaN (Gallium Nitride) on Silicon (Si) Epitaxy HEMT wafer and GaN template on Si substrate. According to different applications, GaN on Silicon HEMT wafer can be classified into GaN-on-Silicon wafer for D-mode, GaN on Silicon substrate for E-mode and GaN on Silicon wafer for RF application. GaN based power electronic devices are still very expensive compared with Si devices. One of the ways to solve the cost problem is to fabricate GaN based heterostructures by epitaxy on Si substrate, and then to fabricate GaN based devices by complementary metal oxide semiconductor (CMOS) technology, so that the cost performance of the devices is better than that of Si devices. However, it is much more difficult to grow GaN on Silicon substrates than on SiC and sapphire substrates. The lattice mismatch ratio of GaN (0001) and Silicon (111) is as high as 16.9%, and the thermal expansion coefficient mismatch (thermal mismatch) is as high as 56%. These are main epitaxial challenges of GaN on Silicon, which may be able to be solved by introducing a buffer layer to GaN on Silicon wafer substrate. As a leading GaN on Silicon HEMT wafer manufacturer, we continuously develop our existing GaN on Silicon technology to gain a better wafer to you. And now please see below GaN on Si wafer specification:

Description

1. GaN on Silicon HEMT Wafer, D-MODE

1.1 Specification of GaN HEMT Wafer on Silicon, D-MODE

Wafer size 2″, 4″, 6″,8″
AlGaN/GaN HEMT structure Refer 1.2
Carrier density >9E12 cm2
Hall mobility /
Sheet Resistivity /
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=30um
Edge exclusion <5mm
SiN passivation layer 0~5nm
u-GaN cap layer 2nm
Al composition 20-30%
AlGaN barrier layer /
GaN channel /
AlGaN buffer /
AlN /
Substrate material Silicon substrate
Si wafer thickness (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

1.2 Structure of GaN HEMT Wafer on Silicon, D-MODE

2. GaN on Silicon HEMT Epitaxy, E-MODE

Wafer size 2″, 4″, 6″,8″
AlGaN/GaN HEMT structure Refer 1.2
Residual 2DEG density (Vg=0 V) <1e18/cm3
AFM RMS (nm) of 5x5um2 <0.25nm
Bow(um) <=30um
Edge exclusion <5mm
p-GaN /
u-GaN cap layer /
Al composition 20-30%
AlGaN barrier layer /
GaN channel /
AlGaN buffer /
Substrate material Silicon substrate
Si wafer thickness (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

3. Gallium Nitride HEMT Wafer on Silicon for RF Application

Wafer size 2″, 4″, 6″,8″
AlGaN/GaN HEMT structure Refer 1.2
Carrier density >9E12 cm2
Hall mobility /
Sheet Resistivity /
AFM RMS (nm) of 5x5um2 <0.25nm
Bow(um) <=30um
Edge exclusion <5mm
SiN passivation layer 0~5nm
u-GaN cap layer /
Al composition 20-30%
AlGaN barrier layer /
GaN channel /
AlGaN buffer /
AlN /
Substrate material Silicon substrate
Si substrate resistivity (Ω cm) > 3000
Si wafer thickness (μm) 1000um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

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