As a leading semiconductor wafer manufacturer, PAM-XIAMEN can supply III-V semiconductor epitaxial wafers, more specifications please refer to https://www.ganwafer.com/product/iii-v-epi-wafer/. Here we take the delta...
In terms of mid-infrared detection in the 3-5um band, detectors based on InSb materials stand out from many material devices due to their mature...
We often receive the demands for “wafer”, “die”, and “chip” from customers. Among them, what PAM-XIAMEN can offer is the semiconductor wafer. So what...
PAM-XIAMEN can supply GaAs based LED wafer with GaInP / AlGaInP multi-quantum wells (MQWs). There are two categories of LEDs used in the lighting...
Metal-organic chemical vapor deposition (MOCVD) is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). MOCVD uses...
Indium antimonide (InSb) has the characteristics of the lowest melting point, narrow band gap, high carrier mobility, and good structural integrity. It is a...
AlGaAs / GaAs heterostructure can be offered by PAM-XIAMEN. Aluminum gallium arsenide (AlGaAs), as an important optoelectronic basic material, is widely used in high-speed...
Heteroepitaxial InSb thin film directly on semi-insulating GaAs substrate and other III-V wafers are available. Epilayers of InSb and InSb alloys have attracted great...
PAM-XIAMEN can offer GaSb epitaxial wafer with type II superlattice (T2SL) structure. T2SL is a III-V group 6.1Å Sb-based material composed of InAs (6.0583...
Currently, in the preparation of blue LEDs, gallium nitride (GaN) materials are usually grown by means of heteroepitaxy. In commercial GaN based LED, most...
GaInAsP / GaInP / AlGaInP laser diode structure materials grown on GaAs substrate with a narrow waveguide is for fabricating laser diodes emitting wavelength...
Light emitting diode (LED) structure with GaInP / AlInP epilayers can be offered by PAM-XIAMEN. The ternary InGaP and AlInP materials are lattice matched...
