InP / InGaAs Semiconductor Wafer for PIN NIR Diode Detector
Because III-V semiconductor InP / InGaAs has such advantages as direct band structure, high electron mobility, adjustable band gap, long absorption wavelength (920nm~1700nm), it...
04Nov
Indium Gallium Arsenide Phosphide (InGaAsP) Thin Film
The indium gallium arsenide phosphide (GalnAsP) quaternary alloy semiconductor material matched with indium phosphide (InP) single crystal substrate lattice has an adjustable band gap...
08Oct
Red LED Thin Film Wafer
LED epitaxial wafers are located in the upstream link of the LED industry chain, which is the link with the highest technical content in...
01Aug
Si-Delta Doped GaAs PHEMT Heterostructure
As a leading semiconductor wafer manufacturer, Ganwafer can supply III-V semiconductor epitaxial wafers, more specifications please refer to https://www.ganwafer.com/product/iii-v-epi-wafer/. Here we take the delta...
26Jul
How to Make PN Junction of InSb Photosensitive Chip?
In terms of mid-infrared detection in the 3-5um band, detectors based on InSb materials stand out from many material devices due to their mature...
16Jun
Connection and Distinction among Wafer, Die, and Chip
We often receive the demands for “wafer”, “die”, and “chip” from customers. Among them, what Ganwafer can offer is the semiconductor wafer. So what...
15Jun
GaInP / AlGaInP LED Structure Grown on GaAs Substrate
Ganwafer can supply GaAs based LED wafer with GaInP / AlGaInP multi-quantum wells (MQWs). There are two categories of LEDs used in the lighting...
02Jun
Metal-organic Chemical Vapor Deposition (MOCVD) Technology
Metal-organic chemical vapor deposition (MOCVD) is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). MOCVD uses...
19May
InSb Wafer Market in Photonic Cooled Infrared Detector
Indium antimonide (InSb) has the characteristics of the lowest melting point, narrow band gap, high carrier mobility, and good structural integrity. It is a...
18May
AlGaAs / GaAs Heterostructure
AlGaAs / GaAs heterostructure can be offered by Ganwafer. Aluminum gallium arsenide (AlGaAs), as an important optoelectronic basic material, is widely used in high-speed...
11May
InSb Epitaxial Layer on GaAs
Heteroepitaxial InSb thin film directly on semi-insulating GaAs substrate and other III-V wafers are available. Epilayers of InSb and InSb alloys have attracted great...
06May
InAs / GaSb Type II Superlattice (T2SL) Structure
Ganwafer can offer GaSb epitaxial wafer with type II superlattice (T2SL) structure. T2SL is a III-V group 6.1Å Sb-based material composed of InAs (6.0583...