News

AlGaAs / GaAs heterostructure

AlGaAs / GaAs Heterostructure

AlGaAs / GaAs heterostructure can be offered by PAM-XIAMEN. Aluminum gallium arsenide (AlGaAs), as an important optoelectronic basic material, is widely used in high-speed...

InSb Epitaxial Layer on GaAs

Heteroepitaxial InSb thin film directly on semi-insulating GaAs substrate and other III-V wafers are available. Epilayers of InSb and InSb alloys have attracted great...

InP Laser Diode Wafer

1240nm InP Laser Diode Structures

InP (Indium Phosphide) material system includes ternary and quaternary III-V semiconductor materials, such as InGaAs, InGaAsP, InAlGaAs and InAlAsP, which are lattice matched to...

GaAs Photocathode Epitaxial Wafer

GaAs Photocathode Epitaxial Wafer

Photocathode epitaxial wafer is based on GaAs substrate epitaxial growth of AlGaAs/GaAs/AlGaAs, which is an important material of the third-generation micro-optical intensifier. The detector...