Connection and Distinction among Wafer, Die, and Chip
We often receive the demands for “wafer”, “die”, and “chip” from customers. Among them, what PAM-XIAMEN can offer is the semiconductor wafer. So what...
15Jun
GaInP / AlGaInP LED Structure Grown on GaAs Substrate
PAM-XIAMEN can supply GaAs based LED wafer with GaInP / AlGaInP multi-quantum wells (MQWs). There are two categories of LEDs used in the lighting...
02Jun
Metal-organic Chemical Vapor Deposition (MOCVD) Technology
Metal-organic chemical vapor deposition (MOCVD) is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). MOCVD uses...
19May
InSb Wafer Market in Photonic Cooled Infrared Detector
Indium antimonide (InSb) has the characteristics of the lowest melting point, narrow band gap, high carrier mobility, and good structural integrity. It is a...
18May
AlGaAs / GaAs Heterostructure
AlGaAs / GaAs heterostructure can be offered by PAM-XIAMEN. Aluminum gallium arsenide (AlGaAs), as an important optoelectronic basic material, is widely used in high-speed...
11May
InSb Epitaxial Layer on GaAs
Heteroepitaxial InSb thin film directly on semi-insulating GaAs substrate and other III-V wafers are available. Epilayers of InSb and InSb alloys have attracted great...
06May
InAs / GaSb Type II Superlattice (T2SL) Structure
PAM-XIAMEN can offer GaSb epitaxial wafer with type II superlattice (T2SL) structure. T2SL is a III-V group 6.1Å Sb-based material composed of InAs (6.0583...
24Apr
Sapphire-based Blue LED GaN Epi Structure
Currently, in the preparation of blue LEDs, gallium nitride (GaN) materials are usually grown by means of heteroepitaxy. In commercial GaN based LED, most...
22Apr
789nm AlGaInP / GaAs Laser Structure
GaInAsP / GaInP / AlGaInP laser diode structure materials grown on GaAs substrate with a narrow waveguide is for fabricating laser diodes emitting wavelength...
21Apr
GaInP / AlInP Light Emitting Diode Structure
Light emitting diode (LED) structure with GaInP / AlInP epilayers can be offered by PAM-XIAMEN. The ternary InGaP and AlInP materials are lattice matched...
20Apr
1240nm InP Laser Diode Structures
InP (Indium Phosphide) material system includes ternary and quaternary III-V semiconductor materials, such as InGaAs, InGaAsP, InAlGaAs and InAlAsP, which are lattice matched to...
11Apr
GaAs Photocathode Epitaxial Wafer
Photocathode epitaxial wafer is based on GaAs substrate epitaxial growth of AlGaAs/GaAs/AlGaAs, which is an important material of the third-generation micro-optical intensifier. The detector...