GaN/Si-HEMT-Struktur
GaN has excellent physical properties such as high breakdown electric field strength and high thermal conductivity, making it an ideal material for fabricating high-frequency...
11Apr
InSb MBE-Wachstum
Indium antimonide (InSb), as a III-V binary compound semiconductor material, has stable physical and chemical properties and excellent process compatibility. InSb has a very narrow...
29Jan
1,5-um-InGaAsP/InP-Quantum-Well-Laserstruktur
Using bulk materials and quantum wells as active regions, InP-based material systems can cover all wavelengths of optical fiber communication. At present, materials used...
15Nov
InP / InGaAs-Halbleiterwafer für PIN-NIR-Diodendetektor
Because III-V semiconductor InP / InGaAs has such advantages as direct band structure, high electron mobility, adjustable band gap, long absorption wavelength (920nm~1700nm), it...
04Nov
Indium-Gallium-Arsenid-Phosphid (InGaAsP)-Dünnfilm
The indium gallium arsenide phosphide (GalnAsP) quaternary alloy semiconductor material matched with indium phosphide (InP) single crystal substrate lattice has an adjustable band gap...
08Oct
Rote LED-Dünnfilmwafer
LED epitaxial wafers are located in the upstream link of the LED industry chain, which is the link with the highest technical content in...
01Aug
Si-Delta-dotierte GaAs-PHEMT-Heterostruktur
As a leading semiconductor wafer manufacturer, Ganwafer can supply III-V semiconductor epitaxial wafers, more specifications please refer to https://www.ganwafer.com/product/iii-v-epi-wafer/. Here we take the delta...
26Jul
Wie erstelle ich einen PN-Übergang eines lichtempfindlichen InSb-Chips?
In terms of mid-infrared detection in the 3-5um band, detectors based on InSb materials stand out from many material devices due to their mature...
16Jun
Verbindung und Unterscheidung zwischen Wafer, Die und Chip
We often receive the demands for “wafer”, “die”, and “chip” from customers. Among them, what Ganwafer can offer is the semiconductor wafer. So what...
15Jun
Auf GaAs-Substrat gewachsene GaInP/AlGaInP-LED-Struktur
Ganwafer can supply GaAs based LED wafer with GaInP / AlGaInP multi-quantum wells (MQWs). There are two categories of LEDs used in the lighting...
02Jun
Technologie der metallorganischen chemischen Gasphasenabscheidung (MOCVD).
Metal-organic chemical vapor deposition (MOCVD) is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). MOCVD uses...
19May
InSb Wafer Market in Photonic Cooled Infrared Detector
Indium antimonide (InSb) has the characteristics of the lowest melting point, narrow band gap, high carrier mobility, and good structural integrity. It is a...