Ganwafer a leading epitaxy foundry of epi wafer and material solutions focuses on epitaxial growth services for semiconductor manufacturing. We design structures for epitaxial growth and manufacture of compound semiconductor epitaxial wafers. Our epi services are used in electronic and photonic device. As for epitaxial process, we provide III-V Epi service (such as RF epitaxial wafer and Photonics epitaxial wafer) based on GaAs Substrate, InP substrate, GaSb Substrate, InAs Substrate, InSb substrate, or in different types of epi on bare substrates with buried layers by MBE or MOCVD. Our excellent epitaxial technologies deliver low to a high concentration for both n-type and p-type, superior specification epi for R&D, and epi specified for mass production.
Unser III-V-Epitaxie-Halbleiter mit Homoepitaxie und Heteroepitaxie durch MOCVD-, MBE- oder CVD-Epitaxie-Abscheidungstechnologien, einschließlich SiC auf SiC, GaN auf Silizium/SiC/Saphir und III-V-Epitaxie auf GaAs/InP/InAs/GaSb/Silizium. Und die III-V-Wafergrößen, die auf unseren Epitaxie-Verarbeitungsdiensten basieren, können 50,8 mm, 76,2 mm, 100 mm, 150 mm und 200 mm erreichen.
