GaN HEMT Structure Wafer

Estrutura GaN/Si HEMT

GaN has excellent physical properties such as high breakdown electric field strength and high thermal conductivity, making it an ideal material for fabricating high-frequency...

MBE Growth of InSb Epilayer

Crescimento InSb MBE

Indium antimonide (InSb), as a III-V binary compound semiconductor material, has stable physical and chemical properties and excellent process compatibility. InSb has a very narrow...

GaAs pHEMT Epitaxial Wafer

Heteroestrutura de GaAs PHEMT dopado com Si-Delta

As a leading semiconductor wafer manufacturer, Ganwafer can supply III-V semiconductor epitaxial wafers, more specifications please refer to Here we take the delta...