Estrutura GaN/Si HEMT
GaN has excellent physical properties such as high breakdown electric field strength and high thermal conductivity, making it an ideal material for fabricating high-frequency...
11Apr
Crescimento InSb MBE
Indium antimonide (InSb), as a III-V binary compound semiconductor material, has stable physical and chemical properties and excellent process compatibility. InSb has a very narrow...
29Janeiro
Estrutura de laser de poço quântico InGaAsP/InP de 1,5um
Using bulk materials and quantum wells as active regions, InP-based material systems can cover all wavelengths of optical fiber communication. At present, materials used...
15Nov
Wafer semicondutor InP / InGaAs para detector de diodo PIN NIR
Because III-V semiconductor InP / InGaAs has such advantages as direct band structure, high electron mobility, adjustable band gap, long absorption wavelength (920nm~1700nm), it...
04Nov
Fosfeto de arseneto de índio e gálio (InGaAsP) Filme fino
The indium gallium arsenide phosphide (GalnAsP) quaternary alloy semiconductor material matched with indium phosphide (InP) single crystal substrate lattice has an adjustable band gap...
08Oct
Wafer de filme fino de LED vermelho
LED epitaxial wafers are located in the upstream link of the LED industry chain, which is the link with the highest technical content in...
01Aug
Heteroestrutura de GaAs PHEMT dopado com Si-Delta
As a leading semiconductor wafer manufacturer, Ganwafer can supply III-V semiconductor epitaxial wafers, more specifications please refer to https://www.ganwafer.com/product/iii-v-epi-wafer/. Here we take the delta...
26Jul
Como fazer a junção PN do chip fotossensível InSb?
In terms of mid-infrared detection in the 3-5um band, detectors based on InSb materials stand out from many material devices due to their mature...
16Jun
Conexão e distinção entre Wafer, Die e Chip
We often receive the demands for “wafer”, “die”, and “chip” from customers. Among them, what Ganwafer can offer is the semiconductor wafer. So what...
15Jun
Estrutura de LED GaInP / AlGaInP cultivada em substrato de GaAs
Ganwafer can supply GaAs based LED wafer with GaInP / AlGaInP multi-quantum wells (MQWs). There are two categories of LEDs used in the lighting...
02Jun
Tecnologia de Deposição de Vapor Químico Metal-orgânico (MOCVD)
Metal-organic chemical vapor deposition (MOCVD) is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). MOCVD uses...
19May
Mercado de Wafer InSb em Detector Infravermelho Refrigerado Fotônico
Indium antimonide (InSb) has the characteristics of the lowest melting point, narrow band gap, high carrier mobility, and good structural integrity. It is a...