Ganwafer a leading epitaxy foundry of epi wafer and material solutions focuses on epitaxial growth services for semiconductor manufacturing. We design structures for epitaxial growth and manufacture of compound semiconductor epitaxial wafers. Our epi services are used in electronic and photonic device. As for epitaxial process, we provide III-V Epi service (such as RF epitaxial wafer and Photonics epitaxial wafer) based on GaAs Substrate, InP substrate, GaSb Substrate, InAs Substrate, InSb substrate, or in different types of epi on bare substrates with buried layers by MBE or MOCVD. Our excellent epitaxial technologies deliver low to a high concentration for both n-type and p-type, superior specification epi for R&D, and epi specified for mass production.
Nosso semicondutor epitaxial III-V com homoepitaxia e heteroepitaxia por tecnologias de deposição epitaxial MOCVD, MBE ou CVD, incluindo SiC em SiC, GaN em silício/SiC/safira e epitaxia III-V em GaAs/InP/InAs/GaSb/Silicon. E os tamanhos de wafer III-V baseados em nossos serviços de processamento de epitaxia podem chegar a 50,8 mm, 76,2 mm, 100 mm, 150 mm e 200 mm.