Ganwafer a leading epitaxy foundry of epi wafer and material solutions focuses on epitaxial growth services for semiconductor manufacturing. We design structures for epitaxial growth and manufacture of compound semiconductor epitaxial wafers. Our epi services are used in electronic and photonic device. As for epitaxial process, we provide III-V Epi service (such as RF epitaxial wafer and Photonics epitaxial wafer) based on GaAs Substrate, InP substrate, GaSb Substrate, InAs Substrate, InSb substrate, or in different types of epi on bare substrates with buried layers by MBE or MOCVD. Our excellent epitaxial technologies deliver low to a high concentration for both n-type and p-type, superior specification epi for R&D, and epi specified for mass production.
Semikonduktor epitaksi III-V kami dengan homoepitaksi dan heteroepitaksi oleh teknologi pemendapan epitaksi MOCVD, MBE atau CVD, termasuk SiC pada SiC, GaN pada silikon/SiC/nilam dan III-V epitaksi pada GaAs/InP/InAs/GaSb/Silicon. Dan saiz wafer III-V berdasarkan perkhidmatan pemprosesan epitaksi kami boleh mencapai 50.8mm, 76.2mm, 100mm, 150mm dan 200mm.
