Ganwafer a leading epitaxy foundry of epi wafer and material solutions focuses on epitaxial growth services for semiconductor manufacturing. We design structures for epitaxial growth and manufacture of compound semiconductor epitaxial wafers. Our epi services are used in electronic and photonic device. As for epitaxial process, we provide III-V Epi service (such as RF epitaxial wafer and Photonics epitaxial wafer) based on GaAs Substrate, InP substrate, GaSb Substrate, InAs Substrate, InSb substrate, or in different types of epi on bare substrates with buried layers by MBE or MOCVD. Our excellent epitaxial technologies deliver low to a high concentration for both n-type and p-type, superior specification epi for R&D, and epi specified for mass production.
Vår III-V epitaxiella halvledare med homoepitaxi och heteroepitaxi av MOCVD, MBE eller CVD epitaxiella avsättningsteknologier, inklusive SiC på SiC, GaN på kisel/SiC/safir och III-V epitaxi på GaAs/InP/InAs/GaSb/Silicon. Och storleken på III-V-skivor baserade på våra epitaxibehandlingstjänster kan nå 50,8 mm, 76,2 mm, 100 mm, 150 mm och 200 mm.
