Ganwafer a leading epitaxy foundry of epi wafer and material solutions focuses on epitaxial growth services for semiconductor manufacturing. We design structures for epitaxial growth and manufacture of compound semiconductor epitaxial wafers. Our epi services are used in electronic and photonic device. As for epitaxial process, we provide III-V Epi service (such as RF epitaxial wafer and Photonics epitaxial wafer) based on GaAs Substrate, InP substrate, GaSb Substrate, InAs Substrate, InSb substrate, or in different types of epi on bare substrates with buried layers by MBE or MOCVD. Our excellent epitaxial technologies deliver low to a high concentration for both n-type and p-type, superior specification epi for R&D, and epi specified for mass production.
SiC üzerinde SiC, silikon/SiC/safir üzerinde GaN ve GaAs/InP/InAs/GaSb/Silikon üzerinde III-V epitaksi dahil olmak üzere MOCVD, MBE veya CVD epitaksiyel biriktirme teknolojileri ile homoepitaksi ve heteroeptaksi ile III-V epitaksiyel yarı iletkenimiz. Ve epitaksi işleme hizmetlerimize dayanan III-V gofret boyutları 50,8 mm, 76,2 mm, 100 mm, 150 mm ve 200 mm'ye ulaşabilir.
