Ganwafer a leading epitaxy foundry of epi wafer and material solutions focuses on epitaxial growth services for semiconductor manufacturing. We design structures for epitaxial growth and manufacture of compound semiconductor epitaxial wafers. Our epi services are used in electronic and photonic device. As for epitaxial process, we provide III-V Epi service (such as RF epitaxial wafer and Photonics epitaxial wafer) based on GaAs Substrate, InP substrate, GaSb Substrate, InAs Substrate, InSb substrate, or in different types of epi on bare substrates with buried layers by MBE or MOCVD. Our excellent epitaxial technologies deliver low to a high concentration for both n-type and p-type, superior specification epi for R&D, and epi specified for mass production.
MoCVD、MBEまたはCVDエピタキシャル堆積技術によるホモエピタキシーおよびヘテロエピタキシーを備えた当社のIII-Vエピタキシャル半導体。これには、SiC上のSiC、シリコン/ SiC /サファイア上のGaN、およびGaAs / InP / InAs / GaSb /シリコン上のIII-Vエピタキシーが含まれます。 また、エピタキシー処理サービスに基づくIII-Vウェーハのサイズは、50.8mm、76.2mm、100mm、150mm、および200mmに達する可能性があります。
