Epi Service

Ganwafer a leading epitaxy foundry of epi wafer and material solutions focuses on epitaxial growth services for semiconductor manufacturing. We design structures for epitaxial growth and manufacture of compound semiconductor epitaxial wafers. Our epi services are used in electronic and photonic device. As for epitaxial process, we provide III-V Epi service (such as RF epitaxial wafer and Photonics epitaxial wafer) based on GaAs Substrate, InP substrate, GaSb Substrate, InAs Substrate, InSb substrate, or in different types of epi on bare substrates with buried layers by MBE or MOCVD. Our excellent epitaxial technologies deliver low to a high concentration for both n-type and p-type, superior specification epi for R&D, and epi specified for mass production.

Vores III-V epitaksielle halvledere med homoepitaxi og heteroepitaxi ved MOCVD, MBE eller CVD epitaksiale aflejringsteknologier, herunder SiC på SiC, GaN på silicium/SiC/safir og III-V epitaksi på GaAs/InP/InAs/GaSb/Silicon. Og III-V waferstørrelserne baseret på vores epitaksibehandlingstjenester kan nå 50,8 mm, 76,2 mm, 100 mm, 150 mm og 200 mm.

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