AlGaAs / GaAs Heterostructure
AlGaAs / GaAs heterostructure can be offered by Ganwafer. Aluminum gallium arsenide (AlGaAs), as an important optoelectronic basic material, is widely used in high-speed...
11May
InSb Epitaxial Layer on GaAs
Heteroepitaxial InSb thin film directly on semi-insulating GaAs substrate and other III-V wafers are available. Epilayers of InSb and InSb alloys have attracted great...
06May
InAs / GaSb Type II Superlattice (T2SL) Structure
Ganwafer can offer GaSb epitaxial wafer with type II superlattice (T2SL) structure. T2SL is a III-V group 6.1Å Sb-based material composed of InAs (6.0583...
24Apr
Sapphire-based Blue LED GaN Epi Structure
Currently, in the preparation of blue LEDs, gallium nitride (GaN) materials are usually grown by means of heteroepitaxy. In commercial GaN based LED, most...
22Apr
789nm AlGaInP / GaAs Laser Structure
GaInAsP / GaInP / AlGaInP laser diode structure materials grown on GaAs substrate with a narrow waveguide is for fabricating laser diodes emitting wavelength...
21Apr
GaInP / AlInP Light Emitting Diode Structure
Light emitting diode (LED) structure with GaInP / AlInP epilayers can be offered by Ganwafer. The ternary InGaP and AlInP materials are lattice matched...
20Apr
1240nm InP Laser Diode Structures
InP (Indium Phosphide) material system includes ternary and quaternary III-V semiconductor materials, such as InGaAs, InGaAsP, InAlGaAs and InAlAsP, which are lattice matched to...
11Apr
GaAs Photocathode Epitaxial Wafer
Photocathode epitaxial wafer is based on GaAs substrate epitaxial growth of AlGaAs/GaAs/AlGaAs, which is an important material of the third-generation micro-optical intensifier. The detector...
07Apr
GaInP / AlGaInP Laser Diode Structure
III-V compound semiconductor laser diode structures have been developed for more than half a century and their wavelength coverage ranges from deep ultraviolet to...
24Mar
InGaAsP Laser Epitaxial Structure in 2004nm Long Wavelength
In1-xGaxAsyP1-y (indium gallium arsenide phosphide) is an alloy material of GaAs, GaP, InAs or InP. The band gap of InGaAsP can change through adjusting...
10Mar
Homoepitaxy of N-Type Undoped InAs on InAs (001) Substrate
Indium arsenide (InAs) wafer material has great potential for fabricating different devices since its high electron mobility, narrow bandgap, high carrier concentration, and lattice-matched...
07Mar
Extended InGaAs Wafer on InP Substrate
Indium gallium arsenide (InGaAs) wafer is a ternary compound semiconductor, which is suitable for detector applications. The InGaAs is lattice matched to InP substrate,...