Oblea de 4H-SiC de cristal único sin dopar de alta pureza
Los dispositivos de microondas GaN/SiC HEMT son adecuados para vehículos de nueva energía. Para superar la pérdida de señal causada por la capacitancia parásita relacionada con el material del sustrato, se debe usar un sustrato aislante o semiaislante. Por lo tanto,sustrato semiaislante de SiC is the preferred material for high-power GaN/SiC microwave HEMT devices. At present, most GaN/SiC HEMT devices are mostly vanadium-doped semi-insulating 4H-SiC wafer. The back-gate effect of vanadium-doped semi-insulating SiC substrates leads to the degradation of device performance or even failure, and vanadium will be produced in microwave devices. The back gate effect leads to defects such as current collapse, dispersion of leakage current at different frequencies and reduced output power. Therefore, the use of the intrinsic defects of SiC single crystals to introduce deep-level compensating shallow-level impurities to realize undoped high-purity semi-insulating 4H-SiC single crystal wafer has become a research hotspot in the field of silicon carbide. Ganwafer, one of a leading SiC wafer suppliers, can offer 4H silicon carbide (SiC) wafer as follows:
1. Especificaciones de la oblea monocristalina CVD SiC 4H
4H undoped SiC CVD single crystal wafer GANW191204-SIC
*Absorción óptica a 633 nm inferior al 0,1 % por cm para la materia prima
* o materia prima de alta pureza >99,99 % para el crecimiento de cristales
Tamaño de la oblea SiC: 2” DE o 50,8 mm +/-0,2 mm
Espesor: 0,33 o 0,35 mm de espesor
Grado de investigación o grado de producción
Orientación del cristal: en el eje [0001]+/-0,5 grados
Orientación plana primaria: en el eje [1120] +/-5 grados
MPD: menos de 15 por cm2
Pulido de doble cara, CMP de lado Si, preparado para Epi
Rugosidad lateral Si 0.5nm
Otro lado mejor que la rugosidad de 1 nm
TTV: 10um
Arco: <20um
Deformación <20um
2. Estudios sobre la tasa de absorción de la oblea 4H-SiC
High purity optical crystals (from the visible range to the infrared rage up to Sum) are significant for potential applications, such as radiation-hardening, high operation temperature window and optoelectronic devices. For devices fabricated on SiC substrate, optical performance is very crucial subject. There are many researchers using infrared spectroscopy, which is a non-destructive, non-contact method, to study the optical properties of 4H silicon carbide. Ganwafer carried out researches on 4H SiC devices and found that the absorption rate of high purity undoped SiC substrate is >3%, more parameters please refer to the table below:
| Input power: 90mW, F500mm cylindrical lens | |||
| Sic | 50,8 mm | de China | |
| pasar el poder | Poder fefl | Suma | Absorción |
| 61.3 | 25.6 | 86.9 | 3,44% |
| 61.5 | 25.5 | 87 | 3,33% |
| 57 | 29.4 | 86.4 | 4,00% |
| 50.8 | 35.9 | 86.7 | 3,67% |
| 57.2 | 29.5 | 86.7 | 3,67% |
Marca: La banda utilizada en la prueba es la banda infrarroja (~600-800nm).
Para obtener más información, contáctenos por correo electrónico asales@ganwafer.comytech@ganwafer.com.
