High Purity Undoped Single Crystal 4H-SiC Wafer CVD Grown

Plaquette 4H-SiC monocristallin non dopé de haute pureté

Les dispositifs à micro-ondes GaN/SiC HEMT conviennent aux véhicules à énergie nouvelle. Afin de pallier la perte de signal causée par la capacité parasite liée au matériau du substrat, un substrat isolant ou semi-isolant doit être utilisé. Donc,substrat SiC semi-isolant is the preferred material for high-power GaN/SiC microwave HEMT devices. At present, most GaN/SiC HEMT devices are mostly vanadium-doped semi-insulating 4H-SiC wafer. The back-gate effect of vanadium-doped semi-insulating SiC substrates leads to the degradation of device performance or even failure, and vanadium will be produced in microwave devices. The back gate effect leads to defects such as current collapse, dispersion of leakage current at different frequencies and reduced output power. Therefore, the use of the intrinsic defects of SiC single crystals to introduce deep-level compensating shallow-level impurities to realize undoped high-purity semi-insulating 4H-SiC single crystal wafer has become a research hotspot in the field of silicon carbide. Ganwafer, one of a leading SiC wafer suppliers, can offer 4H silicon carbide (SiC) wafer as follows:

1. Spécifications de la plaquette monocristalline 4H SiC CVD

4H undoped SiC CVD single crystal wafer GANW191204-SIC

* Absorption optique à 633 nm inférieure à 0,1 % par cm pour la matière première

* ou matière première de haute pureté > 99,99 % pour la croissance cristalline

Taille de plaquette SiC : 2 pouces OD ou 50,8 mm +/-0,2 mm

Épaisseur : 0,33 ou 0,35 mm d'épaisseur

Qualité de recherche ou qualité de production

Orientation du cristal : sur l'axe [0001]+/-0,5 degré

Orientation à plat principale : sur l'axe [1120] +/-5 degrés

MPD : moins de 15 par cm2

Poli double face, CMP côté Si, prêt pour l'épi

Si rugosité côté 0,5 nm

Autre côté mieux que 1 nm de rugosité

TTV : 10um

Arc : <20um

Chaîne <20um

2. Études sur le taux d'absorption de 4H-SiC Wafer

High purity optical crystals (from the visible range to the infrared rage up to Sum) are significant for potential applications, such as radiation-hardening, high operation temperature window and optoelectronic devices. For devices fabricated on SiC substrate, optical performance is very crucial subject. There are many researchers using infrared spectroscopy, which is a non-destructive, non-contact method, to study the optical properties of 4H silicon carbide. Ganwafer carried out researches on 4H SiC devices and found that the absorption rate of high purity undoped SiC substrate is >3%, more parameters please refer to the table below:

Input power: 90mW, F500mm cylindrical lens
SiC	50,8 mm	de Chine
Puissance de passage	Puissance moyenne	Somme	Absorption
61.3	25.6	86.9	3,44 %
61.5	25.5	87	3,33 %
57	29.4	86.4	4,00%
50.8	35.9	86.7	3,67 %
57.2	29.5	86.7	3,67 %