Udopet enkelt krystal 4H-SiC wafer med høj renhed
GaN/SiC HEMT mikrobølgeenheder er velegnet til nye energikøretøjer. For at overvinde signaltabet forårsaget af parasitisk kapacitans relateret til substratmaterialet, skal der anvendes et isolerende eller semi-isolerende substrat. Derfor,semi-isolerende SiC-substrat is the preferred material for high-power GaN/SiC microwave HEMT devices. At present, most GaN/SiC HEMT devices are mostly vanadium-doped semi-insulating 4H-SiC wafer. The back-gate effect of vanadium-doped semi-insulating SiC substrates leads to the degradation of device performance or even failure, and vanadium will be produced in microwave devices. The back gate effect leads to defects such as current collapse, dispersion of leakage current at different frequencies and reduced output power. Therefore, the use of the intrinsic defects of SiC single crystals to introduce deep-level compensating shallow-level impurities to realize undoped high-purity semi-insulating 4H-SiC single crystal wafer has become a research hotspot in the field of silicon carbide. Ganwafer, one of a leading SiC wafer suppliers, can offer 4H silicon carbide (SiC) wafer as follows:
1. 4H SiC CVD Single Crystal Wafer Specifikationer
4H undoped SiC CVD single crystal wafer GANW191204-SIC
*Optisk absorption ved 633nm mindre end 0,1% pr. cm for råmateriale
* eller højrent råmateriale >99,99% til krystalvækst
SiC Wafer størrelse: 2” OD eller 50,8 mm +/- 0,2 mm
Tykkelse: 0,33 eller 0,35 mm tyk
Forskningsgrad eller produktionskvalitet
Krystalorientering: på akse [0001]+/-0,5 grader
Primær flad orientering: på akse [1120] +/-5 grader
MPD: mindre end 15 pr. cm2
Dobbeltsidet poleret, Si side CMP, epi klar
Si sideruhed 0,5nm
Anden side bedre end 1nm ruhed
TTV: 10 um
Bue: <20um
Warp <20um
2. Undersøgelser af absorptionshastighed af 4H-SiC-wafer
High purity optical crystals (from the visible range to the infrared rage up to Sum) are significant for potential applications, such as radiation-hardening, high operation temperature window and optoelectronic devices. For devices fabricated on SiC substrate, optical performance is very crucial subject. There are many researchers using infrared spectroscopy, which is a non-destructive, non-contact method, to study the optical properties of 4H silicon carbide. Ganwafer carried out researches on 4H SiC devices and found that the absorption rate of high purity undoped SiC substrate is >3%, more parameters please refer to the table below:
| Input power: 90mW, F500mm cylindrical lens | |||
| SiC | 50,8 mm | fra Kina | |
| Send strøm | Fefl magt | Sum | Absorption |
| 61.3 | 25.6 | 86.9 | 3,44 % |
| 61.5 | 25.5 | 87 | 3,33 % |
| 57 | 29.4 | 86.4 | 4,00 % |
| 50.8 | 35.9 | 86.7 | 3,67 % |
| 57.2 | 29.5 | 86.7 | 3,67 % |
Mærke: Båndet brugt i testen er det infrarøde bånd (~600-800nm).
For mere information, kontakt os e-mail påsales@ganwafer.comogtech@ganwafer.com.
