GaN på Silicon HEMT Wafer

GaN på Silicon HEMT Wafer

Ganwafer offers GaN (Gallium Nitride) on Silicon (Si) Epitaxy HEMT wafer and GaN template on Si substrate. According to different applications, GaN on Silicon HEMT wafer can be classified into GaN-on-Silicon wafer for D-mode, GaN on Silicon substrate for E-mode and GaN on Silicon wafer for RF application. GaN based power electronic devices are still very expensive compared with Si devices. One of the ways to solve the cost problem is to fabricate GaN based heterostructures by epitaxy on Si substrate, and then to fabricate GaN based devices by complementary metal oxide semiconductor (CMOS) technology, so that the cost performance of the devices is better than that of Si devices. However, it is much more difficult to grow GaN on Silicon substrates than on SiC and sapphire substrates. The lattice mismatch ratio of GaN (0001) and Silicon (111) is as high as 16.9%, and the thermal expansion coefficient mismatch (thermal mismatch) is as high as 56%. These are main epitaxial challenges of GaN on Silicon, which may be able to be solved by introducing a buffer layer to GaN on Silicon wafer substrate. As a leading GaN on Silicon HEMT wafer manufacturer, we continuously develop our existing GaN on Silicon technology to gain a better wafer to you. And now please see below GaN on Si wafer specification:

Beskrivelse

1. GaN på silicium HEMT wafer, D-MODE

1.1 Specifikation af GaN HEMT Wafer på silicium, D-MODE

Wafer størrelse 2", 4", 6", 8"
AlGaN / GaN HEMT-struktur Se 1.2
Bærertæthed >9E12 cm2
Hall mobilitet /
Ark modstand /
AFM RMS (nm) på 5x5um2 <0,25nm
Bue(um) <=30 um
Kantekskludering <5 mm
SiN passiveringslag 0~5nm
u-GaN dæklag 2 nm
Al sammensætning 20-30 %
AlGaN barrierelag /
GaN kanal /
AlGaN buffer /
AlN /
Underlagsmateriale Silicium substrat
Si wafer tykkelse (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

1.2 Struktur af GaN HEMT wafer på silicium, D-MODE

2. GaN på silicium HEMT epitaksi, E-MODE

Wafer størrelse 2", 4", 6", 8"
AlGaN / GaN HEMT-struktur Se 1.2
Resterende 2DEG tæthed (Vg=0 V) <1e18/cm3
AFM RMS (nm) på 5x5um2 <0,25nm
Bue(um) <=30 um
Kantekskludering <5 mm
p-GaN /
u-GaN dæklag /
Al sammensætning 20-30 %
AlGaN barrierelag /
GaN kanal /
AlGaN buffer /
Underlagsmateriale Silicium substrat
Si wafer tykkelse (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

3. Galliumnitrid HEMT-wafer på silicium til RF-anvendelse

Wafer størrelse 2", 4", 6", 8"
AlGaN / GaN HEMT-struktur Se 1.2
Bærertæthed >9E12 cm2
Hall mobilitet /
Ark modstand /
AFM RMS (nm) på 5x5um2 <0,25nm
Bue(um) <=30 um
Kantekskludering <5 mm
SiN passiveringslag 0~5nm
u-GaN dæklag /
Al sammensætning 20-30 %
AlGaN barrierelag /
GaN kanal /
AlGaN buffer /
AlN /
Underlagsmateriale Silicium substrat
Si-substratresistivitet (Ω cm) > 3000
Si wafer tykkelse (μm) 1000um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

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