GaN sur tranche de silicium HEMT
Ganwafer offers GaN (Gallium Nitride) on Silicon (Si) Epitaxy HEMT wafer and GaN template on Si substrate. According to different applications, GaN on Silicon HEMT wafer can be classified into GaN-on-Silicon wafer for D-mode, GaN on Silicon substrate for E-mode and GaN on Silicon wafer for RF application. GaN based power electronic devices are still very expensive compared with Si devices. One of the ways to solve the cost problem is to fabricate GaN based heterostructures by epitaxy on Si substrate, and then to fabricate GaN based devices by complementary metal oxide semiconductor (CMOS) technology, so that the cost performance of the devices is better than that of Si devices. However, it is much more difficult to grow GaN on Silicon substrates than on SiC and sapphire substrates. The lattice mismatch ratio of GaN (0001) and Silicon (111) is as high as 16.9%, and the thermal expansion coefficient mismatch (thermal mismatch) is as high as 56%. These are main epitaxial challenges of GaN on Silicon, which may be able to be solved by introducing a buffer layer to GaN on Silicon wafer substrate. As a leading GaN on Silicon HEMT wafer manufacturer, we continuously develop our existing GaN on Silicon technology to gain a better wafer to you. And now please see below GaN on Si wafer specification:
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Description
1. GaN sur plaquette HEMT de silicium, D-MODE
1.1 Spécification de GaN HEMT Wafer sur silicium, D-MODE
Taille de plaquette | 2″, 4″, 6″, 8″ |
AlGaN / GaN structure HEMT | Se reporter 1.2 |
Densité porteuse | >9E12 cm2 |
Mobilité de salle | / |
Résistivité de feuille | / |
AFM RMS (nm) de 5x5um2 | <0.25nm |
Arc (euh) | <=30um |
exclusion de bord | <5mm |
Couche de passivation SiN | 0~5nm |
couche de protection u-GaN | 2nm |
Al composition | 20 à 30% |
Couche barrière AlGaN | / |
Canal GaN | / |
Tampon AlGaN | / |
AIN | / |
Matériau du substrat | Substrat de silicium |
Épaisseur de plaquette Si (μm) | 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″) |
1.2 Structure de la plaquette GaN HEMT sur silicium, D-MODE
2. Épitaxie GaN sur Silicium HEMT, E-MODE
Taille de plaquette | 2″, 4″, 6″, 8″ |
AlGaN / GaN structure HEMT | Se reporter 1.2 |
Densité résiduelle 2DEG (Vg=0 V) | <1e18/cm3 |
AFM RMS (nm) de 5x5um2 | <0.25nm |
Arc (euh) | <=30um |
exclusion de bord | <5mm |
p-GaN | / |
couche de protection u-GaN | / |
Al composition | 20 à 30% |
Couche barrière AlGaN | / |
Canal GaN | / |
Tampon AlGaN | / |
Matériau du substrat | Substrat de silicium |
Épaisseur de plaquette Si (μm) | 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″) |
3. Plaquette HEMT de nitrure de gallium sur silicium pour application RF
Taille de plaquette | 2″, 4″, 6″, 8″ |
AlGaN / GaN structure HEMT | Se reporter 1.2 |
Densité porteuse | >9E12 cm2 |
Mobilité de salle | / |
Résistivité de feuille | / |
AFM RMS (nm) de 5x5um2 | <0.25nm |
Arc (euh) | <=30um |
exclusion de bord | <5mm |
Couche de passivation SiN | 0~5nm |
couche de protection u-GaN | / |
Al composition | 20 à 30% |
Couche barrière AlGaN | / |
Canal GaN | / |
Tampon AlGaN | / |
AIN | / |
Matériau du substrat | Substrat de silicium |
Résistivité du substrat Si (Ω cm) | > 3000 |
Épaisseur de plaquette Si (μm) | 1000um(2″), 1000um(4″), 1300um(6″), 1500um(8″) |
Remarque:
Le gouvernement chinois a annoncé de nouvelles limites à l'exportation de matériaux Gallium (tels que GaAs, GaN, Ga2O3, GaP, InGaAs et GaSb) et de matériaux Germanium utilisés pour fabriquer des puces semi-conductrices. À partir du 1er août 2023, l'exportation de ces matériaux n'est autorisée que si nous obtenons une licence du ministère chinois du Commerce. J'espère que tu comprends!