GaN pada Wafer HEMT Nilam

GaN pada Wafer HEMT Nilam

Ganwafer offers GaN on Sapphire wafers with HEMT structure and GaN template on Sapphire substrate for power or RF devices. The epitaxial layers of GaN based materials and devices are mainly grown on sapphire substrates. Why epitaxial GaN growth on Sapphire? Reasons are that sapphire substrate has many advantages: firstly, sapphire substrate has mature production technology and good device quality; secondly, sapphire has good stability and can be used in high temperature growth process; finally, sapphire has high mechanical strength and is easy to handle and clean. Therefore, most of the GaN HEMT wafer processes are based on sapphire. However, using sapphire as substrate also has some problems, such as lattice mismatch and thermal stress mismatch, which will produce a large number of defects in the GaN / Sapphire epitaxial layer and cause difficulties in the subsequent device processing.

Dan sekarang sila lihat di bawah spesifikasi wafer HEMT GaN-on-Sapphire:

Penerangan

1. GaN pada Wafer Nilam dengan Struktur HEMT untuk Aplikasi Kuasa

Saiz wafer 2”, 3”, 4”, 6”
struktur AlGaN / Gan HEMT rujuk 1.2
Ketumpatan pembawa 6E12~2E13 sm2
Mobiliti dewan /
XRD(102)FWHM ~arc.sec
XRD(002)FWHM ~arc.sec
Kerintangan Lembaran /
AFM RMS (nm) sebanyak 5x5um2 <0.25nm
Tunduk(um) <=35um
pengecualian Edge <2mm
Lapisan pasif SiN 0~30nm
Al komposisi 20-30%
Dalam komposisi 17% untuk InAlN
Tudung GaN /
Penghalang AlGaN/(In)AlN /
interlayer AlN /
saluran GaN /
C penimbal GaN doped /
Bogel /
Bahan substrat Sapphire substrat

 

2. Struktur GaN HEMT pada Substrat Nilam untuk Aplikasi RF

Saiz wafer 2”, 3”, 4”, 6”
struktur AlGaN / Gan HEMT rujuk 1.2
Ketumpatan pembawa 6E12~2E13 sm2
Mobiliti dewan /
XRD(102)FWHM /
XRD(002)FWHM /
Kerintangan Lembaran /
AFM RMS (nm) sebanyak 5x5um2 <0.25nm
Tunduk(um) <=35um
pengecualian Edge <2mm
lapisan pasif siN 0~30nm
Lapisan penutup u-GaN /
Al komposisi 20-30%
Dalam komposisi 17% untuk InAlN
Lapisan penghalang AlGaN 20~30nm
AlN spacer /
Lapisan penimbal GaN(um) /
saluran GaN /
Penampan GaN yang didopkan Fe /
Bogel /
Bahan substrat Sapphire substrat

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