GaN na Sapphire HEMT Wafer
Ganwafer offers GaN on Sapphire wafers with HEMT structure and GaN template on Sapphire substrate for power or RF devices. The epitaxial layers of GaN based materials and devices are mainly grown on sapphire substrates. Why epitaxial GaN growth on Sapphire? Reasons are that sapphire substrate has many advantages: firstly, sapphire substrate has mature production technology and good device quality; secondly, sapphire has good stability and can be used in high temperature growth process; finally, sapphire has high mechanical strength and is easy to handle and clean. Therefore, most of the GaN HEMT wafer processes are based on sapphire. However, using sapphire as substrate also has some problems, such as lattice mismatch and thermal stress mismatch, which will produce a large number of defects in the GaN / Sapphire epitaxial layer and cause difficulties in the subsequent device processing.
A nyní se prosím podívejte níže na specifikace waferu GaN-on-Sapphire HEMT:
- Popis
- Poptávka
Popis
1. GaN na safírovém plátku se strukturou HEMT pro výkonové aplikace
Velikost oplatky | 2", 3", 4", 6" |
Struktura AlGaN/GaN HEMT | Viz 1.2 |
Hustota nosiče | 6E12~2E13 cm2 |
Halová mobilita | / |
XRD(102)FWHM | ~arc.sec |
XRD(002)FWHM | ~arc.sec |
Listový odpor | / |
AFM RMS (nm) 5x5um2 | <0,25 nm |
luk (um) | <=35 um |
Vyloučení hran | <2 mm |
SiN pasivační vrstva | 0~30nm |
Al složení | 20–30 % |
Ve složení | 17 % pro InAlN |
GaN čepice | / |
AlGaN/(In)AlN bariéra | / |
AlN mezivrstva | / |
GaN kanál | / |
C dopovaný GaN pufr | / |
Nahota | / |
Materiál podkladu | Safírový substrát |
2. Struktura GaN HEMT na safírovém substrátu pro RF aplikaci
Velikost oplatky | 2", 3", 4", 6" |
Struktura AlGaN/GaN HEMT | Viz 1.2 |
Hustota nosiče | 6E12~2E13 cm2 |
Halová mobilita | / |
XRD(102)FWHM | / |
XRD(002)FWHM | / |
Listový odpor | / |
AFM RMS (nm) 5x5um2 | <0,25 nm |
luk (um) | <=35 um |
Vyloučení hran | <2 mm |
pasivační vrstva siN | 0~30nm |
krycí vrstva u-GaN | / |
Al složení | 20–30 % |
Ve složení | 17 % pro InAlN |
AlGaN bariérová vrstva | 20~30nm |
AlN distanční vložka | / |
Vyrovnávací vrstva GaN (um) | / |
GaN kanál | / |
Fe dopovaný GaN pufr | / |
Nahota | / |
Materiál podkladu | Safírový substrát |
Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. From August 1, 2023 on, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding!